Cambridge Enterprise Limited

International Business Machines Corporation

Dhiren Manji Kara

Carmen Palacios Berraquero

Mete Atature

Mathias B Steiner

Michael Engel

Andrea Carlo Ferrari

Antonio Lombardo

Ilya Goykhman

Matteo Barbone

A quantum light emitting device includes a carrier substrate, an insulator, a first semiconductor device, a second semiconductor device, a first contact, and a second contact. The quantum light device includes a carrier substrate comprising silicon and configured with an electrically insulating top surface. The quantum light device also includes an insulator configured on the carrier substrate. The quantum light device includes a first semiconductor structure comprising a first semiconductor material configured on the insulator. Further, the quantum light device includes a second semiconductor structure comprising a second semiconductor material configured on the insulator, with an overlap region of the second semiconductor structure electrically coupling with the first semiconductor structure, a dimensional characteristic of the overlap region being configured to limit a photon emission from the overlap region to a single photon.

Layered material based quantum light emitting device

A quantum-confined device () and method for manufacture thereof. The device () comprises a substrate () having at least one protrusion () and a layer of a two-dimensional material () arranged thereupon. The layer of the two-dimensional material () is arranged on the substrate () and the at least one protrusion (), the at least one protrusion () causing localised strain in the layer of the two-dimensional material () to form a quantum dot or a quantum wire at the region of localised strain.

Scalable quantum-confined device

Growing community of inventors

Potters Bar, United Kingdom

Dhiren Manji Kara