Sandisk Technologies Inc.

Dharmaraju Marenahally Krishna

Arun Thandapani

Piyush Anil Dhotre

Divya Prasad

Thendral Murugaiyan

Sateesh Desireddi

Sainath Viswasarai

Aneesh Puthoor

Suman Tenugu

Narayan K

Anantharaj Thalaimalaivanaraj

Chittoor Devarajan Sunil Kumar

Anantharaj Thalaimalai Vanaraj

Abhilash Ettigi

A memory device includes a number of different memory dies and/or planes. One or more host operations, such as write operations and/or read operations, are performed on each memory die and/or plane in sequence. For example, from memory die 0 to memory die n. A garbage collection process is performed in parallel with the host operations. However, the garbage collection process is performed in a reverse order when compared with the order of the host operations. For example, the garbage collection process is performed from memory die n to memory die 0.

Reverse garbage collection process for a storage device

Non-volatile memory and processes for reprogramming data posing a potential reliability concern are provided. A process is provided for distinguishing between cross-temperature effects and read disturb effects as part of determining whether to perform a maintenance operation such as reprogramming. A process is provided that compensates for cross-temperature effects while testing to determine whether to perform a maintenance operation. Applying temperature compensation attempts to remove cross-temperature effects so that testing accurately detects whether read disturb has occurred, without the effects of temperature. By reducing cross-temperature effects, maintenance operations can be more accurately scheduled for memory that has experienced read disturb, as opposed to cross-temperature effects.

Dynamic read table block filter

A die includes a plurality of memory cells. The die also includes a calculation circuit configured to determine a difference between a write temperature and a read temperature in response to a read request for user data stored in the memory cells. The die further includes a notification circuit configured to signal a cross-temperature condition in response to the difference satisfying a threshold.

Throughput performance for cross temperature handling scenarios

A storage system and method for marginal write-abort detection using a memory parameter change is provided. In one embodiment, a method for detecting a write abort is provided that is performed in a storage system having a memory. The method comprises reading a lower page in memory; determining if any data is written in the lower page; and in response to determining that no data is written in the lower page: increasing source voltage for memory cells in the lower page; re-reading the lower page; determining if a read failure exists in the re-read lower page; and in response to determining that a read failure exists in the re-read lower page, detecting a write abort. Other embodiments are possible, and each of the embodiments can be used alone or together in combination.

Storage system and method for marginal write-abort detection using a memory parameter change

Growing community of inventors

Bengaluru, India

Dharmaraju Marenahally Krishna