Texas Instruments Corporation

Dhanoop Varghese

Henry Litzmann Edwards

Binghua Hu

Thomas Dyer Bonifield

Jeffrey Alan West

Alexei Sadovnikov

Xiaoju Wu

James Robert Todd

Andrew Derek Strachan

Elizabeth Costner Stewart

Adrian Salinas

Described examples include integrated circuits, drain extended transistors and fabrication methods in which an oxide structure is formed over a drift region of a semiconductor substrate, and a shallow implantation process is performed using a first mask that exposes the oxide structure and a first portion of the semiconductor substrate to form a first drift region portion for connection to a body implant region. A second drift region portion is implanted in the semiconductor substrate under the oxide structure by a second implantation process using the first mask at a higher implant energy.

Drain extended transistor

An integrated circuit a semiconductor substrate includes a device die with includes transistors configured to execute an electrical function. A first interconnect layer of the device die is configured to route electrical signals or power to terminals of the transistors. An interlevel dielectric (ILD) layer is located over the interconnect layer. A metal electrode located over the ILD layer. A dielectric barrier layer is located between the ILD layer and the metal electrode. A scribe seal surrounds the device die. A first opening within the dielectric barrier layer surrounds the metal electrode. Second and third openings within the dielectric barrier layer are located between the first opening and the scribe seal.

Hydrogen ventilation of CMOS wafers

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Plano, TX, United States of America

Dhanoop Varghese