Rohm & Haas Electronic Materials LLC

Dow Global Technolgoies LLC

Rohm and Haas Electronic Materials Korea Ltd.

Other

Rohm and Haas Electronics Materials LLC

Shipley Company LLC

Dupont Electronics, Inc.

Deyan Wang

Cheng-Bai Xu

George G Barclay

Chunyi Wu

Peter Trefonas, Iii

Cong Liu

Mingqi Li

Doris H Kang

Kathleen M O'Connell

Shintaro Yamada

Jieqian Zhang

Robert D Mikkola

Michael K Gallagher

Peng-Wei Chuang

Phillip Dene Hustad

Irvinder Kaur

Christopher D Gilmore

Rahul Sharma

Jibin Sun

Jong Keun Park

Young Cheol Bae

Gerhard Pohlers

Thomas Cardolaccia

Lujia Bu

Rosemary Bell

Sheng Liu

Cecily Andes

Christopher Nam Lee

Young Seok Kim

Yerang Kang

Seokho Kang

Yixuan Song

Joon Seok Oh

Sabrina Wong

James F Cameron

Anthony Zampini

Emad Aqad

Suzanne M Coley

Clark H Cummins

Charles R Szmanda

Paul J LaBeaume

Matthias Stefan Ober

Martin William Bayes

Li Cui

Huaxing Zhou

Li Jia

Stefan J Caporale

Keren Zhang

Iou-Sheng Ke

Jaclyn Murphy

Aaron A Rachford

Ping Ding

Kenneth Hernandez

Thomas A Estelle

Hee Jae Yoon

Kenneth J Spizuoco

Neelima Chandrayan

Anton Li

Jinrong Liu

Moo-Young Lee

Joon-Seok Oh

Yinjie Cen

Michael Mulzer

Andrew Stella

Peter Trefonas Iii

Disclosed is an actinic radiation curable (meth)acrylic composition for use in hardcoats for optical displays containing one or more multifunctional (meth)acrylate monomers, one or more Si-containing (meth)acrylate monomers, one or more UV radical initiators, one or more monomers to improve surface cure, nanoparticles, and one or more organic solvents. Coated hardcoat articles made from this composition exhibit improved properties for use in display applications.

UV-curing resin compositions for hard coat applications

There is disclosed an optically clear shear thickening fluid and a protection assembly comprising the optically clear shear thickening fluid. It further relates to uses of the optically clear shear thickening fluid in electronic devices, particularly in optical display devices. The optically clear shear thickening fluid includes: (a) a solid nanoparticle having an average particle size equal to or less than 100 nm; (b) at least one polymer; and (c) a liquid medium. The at least one polymer is substantially soluble in the liquid medium.

Optically clear shear thickening fluids and optical display device comprising same

Coating compositions comprise: a curable compound comprising: a core chosen from a Ccarbocyclic aromatic ring, a Cheterocyclic aromatic ring, a Cfused carbocyclic aromatic ring system, a Cfused heterocyclic aromatic ring system, Caliphatic, and Ccycloaliphatic, and three or more substituents of formula (1) wherein at least two substituents of formula (1) are attached to the aromatic core; provided that no substituents of formula (1) are in an ortho position to each other on the same aromatic ring of the core; a polymer; and one or more solvents, wherein the total solvent content is from 50 to 99 wt % based on the coating composition.

Coating compositions and methods of forming electronic devices

Topcoat compositions are provided that can be used in immersion lithography to form photoresist patterns. The topcoat compositions include a solvent system that comprises 1) a first organic solvent represented by formula (I),

Topcoat compositions and photolithographic methods

There is provided a curable composition for forming an anti-reflective film. The composition includes: (a) hollow silica nanoparticles; (b) a siloxane binder having reactive groups; (c) at least one additional material having reactive groups; (d) an initiator; and (e) solvent. The siloxane binder is present in an amount that is at least 50% by weight of the total weight of (siloxane binder+additional materials having reactive groups). The weight ratio of hollow silica nanoparticles to the total of (siloxane binder+additional materials having reactive groups) is no greater than 1.75 to 1.

Anti-reflective coating

Compositions for forming polymer layers useful in the manufacture of display devices, particularly flexible display, and methods of forming such devices are provided.

Polymers for display devices

New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that comprise one or more base reactive groups and (i) one or more polar groups distinct from the base reactive groups, and/or (ii) at least one of the base reactive groups is a non-perfluorinated base reactive group. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

Compositions comprising base-reactive component and processes for photolithography

Acoustic wave sensors comprise: a piezoelectric layer, first and second electrodes arranged with the piezoelectric layer in a piezoelectric transducer circuit; and a polymeric sensing layer for adsorbing a gas-phase analyte, the adsorption of which analyte causes a change in resonant frequency of the piezoelectric transducer circuit, wherein the polymeric sensing layer comprises: (a) a polymer chosen from substituted or unsubstituted: polyarylenes comprising the reaction product of monomers comprising a first monomer comprising an aromatic acetylene group and a second monomer comprising a cyclopentadienone group; polyamides; polypyrazoles; or novolacs; or a cured product thereof; (b) a polymer chosen from substituted or unsubstituted: polyamic acids; or polyamic acid-polyimide copolymers; (c) a polymer formed from one or more monomers comprising a monomer comprising a polar group-substituted arylcyclobutene group, or a cured product thereof; or (d) a polymer comprising polymerized units of a monomer chosen from substituted or unsubstituted: maleimides; or norbomenes; or a cured product thereof. The acoustic wave sensors and methods of using such sensors find particular applicability in the sensing of gas-phase analytes.

Acoustic wave sensors and methods of sensing a gas-phase analyte

Photoresist topcoat compositions, comprising: a first polymer comprising a first repeat unit of general formula (I) and a second repeat unit of general formula (II): wherein: Rindependently represents H, F or optionally fluorinated C1 to C4 alkyl; Rrepresents optionally fluorinated linear, branched or cyclic C1 to C20 alkyl; Lrepresents a single bond or a multivalent linking group; and n is an integer of from 1 to 5; a second polymer comprising a first repeat unit of general formula (III) and a second repeat unit of general formula (IV): wherein: Rindependently represents H, F or optionally fluorinated C1 to C4 alkyl; Rrepresents linear, branched or cyclic C1 to C20 alkyl; Rrepresents linear, branched or cyclic C1 to C20 fluoroalkyl; Lrepresents a single bond or a multivalent linking group; and n is an integer of from 1 to 5; and a solvent. Coated substrates coated with the described topcoat compositions and methods of processing a photoresist composition are also provided. The invention finds particular applicability in the manufacture of semiconductor devices.

Photoresist topcoat compositions and methods of processing photoresist compositions

New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that have sulfonamide substitution. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

Compositions comprising sulfonamide material and processes for photolithography

New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprises one or more materials that have hetero-substituted carbocyclic aryl groups. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

Compositions comprising hetero-substituted carbocyclic aryl component and processes for photolithography

New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprises two or more distinct materials that can be substantially non-mixable with a resin component of the resist. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

Compositions and processes for immersion lithography

New lithographic processing methods are provided which are particularly useful in immersion lithography schemes. In one aspect, processes of the invention comprise: applying on a substrate a photoresist composition; exposing the photoresist layer to radiation activating for the photoresist composition; removing a portion but not all of the exposed photoresist layer; and developing the treated photoresist layer to provide a photoresist relief image.

Processes for photolithography

Disclosed herein is a block copolymer comprising a first segment and a second segment that are covalently bonded to each other and that are chemically different from each other; where the first segment has a first surface free energy and where the second segment has a second surface free energy; and an additive copolymer; where the additive copolymer comprises a surface free energy reducing moiety where the surface free energy reducing moiety has a lower surface free energy than that of the first segment and the second segment; the additive copolymer further comprising one or more moieties having an affinity to the block copolymer; where the surface free energy reducing moiety is chemically different from the first segment and from the second segment; where the additive copolymer is not water miscible; and where the additive copolymer is not covalently bonded with the block copolymer.

Neutral layer polymers, methods of manufacture thereof and articles comprising the same

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Hudson, MA, United States of America

Deyan Wang