Grace Semiconductor Manufacturing Corporation

DeXue Leng

Dong Sheng Li

Jun He

Wang Zheng

Mon Chin Tsai

A method of forming a shallow trench isolation device in order to prevent kick effects comprising a semiconductor structure having a patterned masking layer formed thereon. A shallow trench is formed in the semiconductor structure by using the patterned masking layer as a mask. A liner oxide layer and a doped dielectric layer are formed in sequence on the semiconductor structure to cover the surface of the shallow trench. A layer of oxide is formed on the semiconductor structure to fill the shallow trench. The dopants in the doped dielectric layer diffuse into the semiconductor structure surrounding the shallow trench to form an ion doped area, thereby increasing the threshold voltage caused by the recess on the corner structure in order to prevent the kick effect.

Method of forming a shallow trench isolation device to prevent kick effect

A test key for bridging and continuity testing is provided, comprising at least one test unit, which is composed of a first strand and a second strand embedded or non-touching intertwined with each other. The strand comprising a closed hook, a corresponding extension and a corresponding connection. The corresponding connections are electrically connected to an external voltage by at least one test pad, wherein the closed hook of the first strand is parallel with the closed hook of the second strand. A first corner is formed between the closed hooks and the corresponding extension, causing the closed hook of the first strands to be adjacent and parallel with the closed hook and the extension of the second strand. Moreover, another corner is formed between the extension and the corresponding connection, causing the connection of the first strand to be adjacent and parallel with the extension of second strand, forming an intertwining pattern.

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Shanghai, China

DeXue Leng