Globalfoundries Singapore Pte. Ltd.

Nanyang Technological University

National University of Singapore

Dexter Xueming Tan

Kin Leong Pey

Sai Hooi Yeong

Chee Mang Ng

Yoke King Chin

Eng Huat Toh

Benjamin Colombeau

Chee Chong Lim

Kuang Kian Ong

Clark Kuang Kian Ong

Devices and methods for forming a device are presented. A substrate prepared with a device region is provided. A fin is formed in the device region. The fin includes top and bottom portions. An amorphous isolation buffer is formed at least in the bottom fin portion, leaving the top fin portion crystalline. The top fin portion serves as a body of a fin type transistor.

Device with isolation buffer

A method for forming a device is disclosed. A substrate with a contact region is provided. Vacancy defects are formed in the substrate. The vacancy defects have a peak concentration at a depth D. A metal based contact is formed in the contact region. The metal based contact has a depth Dwhich is equal to about D. The vacancy defects lower the resistance of the metal based contact with the substrate.

Low OHMIC contacts

Embodiments relate to a method for fabricating nano-wires in nano-devices, and more particularly to nano-device fabrication using end-of-range (EOR) defects. In one embodiment, a substrate with a surface crystalline layer over the substrate is provided and EOR defects are created in the surface crystalline layer. One or more fins with EOR defects embedded within is formed and oxidized to form one or more fully oxidized nano-wires with nano-crystals within the core of the nano-wire.

Method for fabricating nano devices

A method of forming a device is presented. The method includes providing a wafer having an active surface and dividing the wafer into a plurality of portions. The wafer is selectively processed by localized heating of a first of the plurality of portions. The wafer is then repeatedly selectively processed by localized heating of a next of the plurality of portions until all plurality of portions have been selectively processed.

Localized anneal

A method for fabricating a semiconductor device is presented. The method includes providing a substrate and forming a gate stack over the substrate. A first laser processing to form vacancy rich regions within the substrate on opposing sides of the gate stack is performed. The vacancy rich regions have a first depth from a surface of the substrate. A first implant causing end of range defect regions to be formed on opposing sides of the gate stack at a second depth from the surface of the substrate is also carried out, wherein the first depth is proximate to the second depth.

Growing community of inventors

Singapore, Singapore

Dexter Xueming Tan