Santa Barbara Research Center

Teledyne Flir Commercial Systems, Inc.

Flir Commercial Systems, Inc.

Devin T Walsh

Darren M Haley

Michael S Ray

Tadashi Horikiri

Royce Duane Clay, Jr

Gary Miller

Thomas Troy Stark

Marinus C DeJong

William E Williamson

Techniques are disclosed for optical imager devices, systems, and methods. In one example, an imaging system includes a focal plane array (FPA) and a light shield. The FPA includes a detector array configured to detect a first portion of electromagnetic radiation and generate a detector signal based on the first portion. The FPA further includes a readout circuit coupled to the detector array and configured to receive the detector signal. The light shield is coupled to the FPA and configured to block a second portion of the electromagnetic radiation. Related devices and methods are also provided.

Imager optical systems and methods

A system comprises an image sensor comprising an array of infrared sensors operable to capture an image of a scene, an integration timing circuit variably controlling an integration time of the infrared sensors, a readout integrated circuit (ROIC) operable to generate signals from the infrared sensors corresponding to the captured image of the scene, and an automatic gain control operable to applied a gain to the generated signals. The system further comprises a dynamic range compensation controller operable to receive image parameters corresponding to the generated signals, compare the received image parameters to target image parameters, and generate an integration timing signal for controlling the integration timing circuit.

Short wave infrared image sensor with automatic exposure and dynamic range control

A photovoltaic diode unit cell (10) includes a first layer (14) having a first type of electrical conductivity and a second layer (16) of Group II-VI material having a second type of electrical conductivity that differs from the first type. The first layer and the second layer are coupled together so as to form a photovoltaic junction (15) therebetween. The photovoltaic junction is coupled via electrical interconnects (18, 20, 22) to a readout 24 and collects first charge carriers resulting from an absorption of IR radiation within the layer 14. The junction also collects second charge carriers resulting from the absorption of visible light in a region of highly graded crystal potential formed, in a Liquid Phase Epitaxy (LPE)-grown embodiment of this invention, at an interface of a substrate and the first layer. The substrate is subsequently removed, preferably by a mechanical operation followed by a wet chemical etch, to expose the region of highly graded crystal potential.

Group II-VI radiation detector for simultaneous visible and IR detection

A photodiode (10) fabricated in accordance with the method of the invention includes a substrate (11) and a semiconductor base region (12) overlying the substrate. The base region is comprised of Group IIB-VIA material and has a first type of electrical conductivity. A passivation layer (16) overlies the base region and is also comprised of Group IIB-VIA material. A dielectric layer (18) at least partially overlies the passivation layer. During fabrication the dielectric layer functions as an etch stop during a removal of excess cap material, the remaining cap material forming a cap region (14) within an opening that is etched through the dielectric layer and the passivation layer. The cap region is also comprised of Group IIB-VIA material, has a second type of electrical conductivity, and forms a heterojunction (14a) with the base region. An electrically conductive contact pad (20) and an electrically conductive interconnect, preferably an indium bump (22), are formed upon the cap region. The topside surface of the photodiode is substantially planar, and the indium bump may be made significantly larger than the area of an underlying photodetector unit cell.

Planar PV HgCdTe DLHJ fabricated by selective cap layer growth

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Goleta, CA, United States of America

Devin T Walsh