Infineon Technologies Ag

Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.

Detlef Nagel

Roland Sittig

Bernd Wagner

Ralf-Ulrich Dudde

Klaus Reimer

Jens Paul

Hanns-Georg Ochsenk&uuml;hn

Reinhart Buhr

The invention relates to a semiconductor component which is capable of blocking such as an (IGBT), a thyristor, a GTO or diodes, especially schottky diodes. An insulator profile section () provided in the border area of an anode metallic coating () is fixed (directly in the edge area) on the substrate () of the component. The insulator profile has a curved area (KB) and a base area (SB), said curved area having a surface (OF) which begins flat and curves outward and upward in a steadily increasing manner. A metallic coating (MET) is deposited on the surface (OF). Said coating directly follows the surface curvature and laterally extends the inner anode metallic coating. The upper end of the curved metallic coating (MET. . . ) is distanced and insulated from one of these surrounding outer metallic coatings (MET) by the surrounding base area (SB) of the insulator profile () such that an extensively constant course of the line of force which evades extreme values results between both metallic coatings (, MET, MET) when reverse voltage or blocking voltage is applied between the interspaced metallic coatings.

Termination of semiconductor components

An electrical component contains a pad formed of an electrically conductive material. The pad serves for the application of a contact element and is complemented by an electrically conductive edge strip. The pad and the edge strip are isolated from one another. The component which includes the pad on which misalignments or deformations of contact elements which occur in a functionality test can be detected easily and directly without additional analytical devices.

Electrical component with a contact and method for forming a contact on a semiconductor material

The invention relates to a semiconductor component with a base zone ( ) extending in a lateral direction (x) of a first type of conductivity (n) and at least two contact areas ( ) for connection to electric contacts (A, K) which zones are separate at least from the base zone ( ) in the lateral direction (x). A base material of the base zone ( ) is silicon (Si) and has a dopant concentration of 10 to 5&times;10 cm and a respective dopant concentration (N ) along a lateral direction (x) of less than 2&times;10 cm determined by integrating the dopant concentration across the vertical thickness of the base area ( ). The semiconductor component further comprises compensation layers ( ) of a second type of conductivity (p) opposed to the first type of conductivity. Said layers extend inside or outside the base area in a lateral direction (x).

Semiconductor component with a high breakdown voltage

The invention relates to a semiconductor component which is capable of blocking such as an (IGBT), a thyristor, a GTO or diodes, especially schottky diodes. An insulator profile section ( ) provided in the border area of an anode metallic coating ( ) is fixed (directly in the edge area) on the substrate ( ) of the component. The insulator profile has a curved area (KB) and a base area (SB), said curved area having a surface (OF) which begins flat and curves outward and upward in a steadily increasing manner. A metallic coating MET ) is deposited on the surface (OF). Said coating directly follows the surface curvature and laterally extends the inner anode metallic coating. The upper end of the curved metallic coating (MET . . . ) is distanced and insulated from one of these surrounding outer metallic coatings (MET ) by the surrounding base area (SB) of the insulator profile ( ) such that an extensively constant course of the line of force which evades extreme values results between both metallic coatings ( , MET , MET ) when reverse voltage or blocking voltage is applied between the interspaced metallic coatings.

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Dresden, Germany

Detlef Nagel