University of California

Japan Science and Technology Agency

Osram Gmbh

Universitaet Bremen

Osram Opto Semiconductors Gmbh

Detlef Hommel

Steven P DenBaars

Umesh Kumar Mishra

Lee McCarthy

Akihiko Murai

Carsten Kruse

Stephan Figge

Helmut Wenisch

A method for producing a wafer bonded structure between (Al, In, Ga)N and Zn(S,Se). A highly reflective and conductive distributed Bragg reflector (DBR) for relatively short optical wave lengths can be fabricated using Zn(S,Se) and MgS/(Zn, Cd)Se materials. Using wafer bonding techniques, these high-quality DBR structures can be combined with a GaN-based optical device structure.

Method for wafer bonding (A1, In, Ga)N and Zn(S, Se) for optoelectronic applications

A semiconductor component for generating a polychromatic electromagnetic radiation has a semiconductor chip with a first semiconductor layer and a second semiconductor layer, which is provided adjacent to the first semiconductor layer and has an electroluminescent region. The electroluminescent region emits electromagnetic radiation of a first wavelength. The first semiconductor layer includes a material which, when excited with the electromagnetic radiation of the first wavelength, re-emits radiation with a second wavelength which is longer than the first wavelength.

Semiconductor component for generating polychromatic electromagnetic radiation

Growing community of inventors

Bremen, Germany

Detlef Hommel