Osram Oled Gmbh

Osram Opto Semiconductors Gmbh

Désirée Queren

Mikko Perälä

Ulrich Streppel

Marco Antretter

Christoph Eichler

Stephan Lutgen

Matthias Sabathil

Uwe Strauss

Adrian Stefan Avramescu

Hubert Halbritter

David J O'Brien

Britta Goeoetz

David Racz

Hailing Cui

Michael Schumann

Thorsten Frank Baumheinrich

Markus Burger

Marc Schillgalies

Ludwig Plötz

Dajana Durach

Mikko Peraelae

A sensor that detects a heart rate and/or a blood oxygen content includes a radiation source and a photodetector, wherein the radiation source includes a light-emitting diode array, the light-emitting diode array includes a plurality of emission regions, the emission regions each include a first light-emitting diode and a second light-emitting diode, the first light-emitting diode includes a first wavelength, the second light-emitting diode includes a second wavelength, and a distance between the first light-emitting diode and the second light-emitting diode within the emission regions is 100 micrometers or less.

Sensor that detects a heart rate and/or a blood oxygen content, and method of operating a sensor

An arrangement that illuminates and records a moving scene, including a light source that illuminates the moving scene, a control device that operates the light source, and a camera that records the moving scene, wherein the light source includes a plurality of pixels, each of which is configured to illuminate an area of the moving scene, the control device is configured to operate the pixels, and the light source includes at least one semiconductor component including at least one semiconductor chip containing two or more of the plurality of pixels.

Arrangement for illuminating and recording a moving scene

An optoelectronic semiconductor chip may include an active region configured to emit electromagnetic radiation during operation of said optoelectronic semiconductor chip. The optoelectronic semiconductor chip comprises conversion elements arranged to convert the wavelength of the electromagnetic radiation emitted by the active region during operation, and at least one barrier at least partially impermeable to the electromagnetic radiation emitted by the active region. The barrier is disposed in a lateral direction between the conversion elements, the lateral direction being parallel to the main extension plane of the semiconductor body, and the barrier extending transversely to the lateral direction. The active region has at least two emission regions which can be driven separately from each other, and each of the conversion elements is disposed in a radiation direction of the electromagnetic radiation emitted from one of the emission regions. A method for manufacturing an optoelectronic semiconductor chip is also disclosed.

Optoelectronic semiconductor chip and method of manufacturing an optoelectronic semiconductor chip

A light-emitting semiconductor component may include a conversion layer, a radiation surface, and a plurality of adjacently arranged emission regions configured to be operated separately, individually and/or in groups. The conversion layer may be arranged downstream of the emission regions in the direction of radiation of the emission regions. The emission regions may be configured to emit primary radiation of a first wavelength range into the conversion layer. The conversion layer may be configured to convert at least a portion of the primary radiation into secondary radiation of a second wavelength range. Mixed radiation is configured to be emitted from the light-emitting semiconductor component at the radiation surface. The mixed radiation may include primary radiation and secondary radiation. A probability that primary radiation travelling from the emission region to the radiation surface is converted into secondary radiation may vary along the radiation surface by a maximum factor of 2.

Light-emitting semiconductor component

An illumination dystem, an electronic Device and a method for using an illumination device are disclosed. In an embodiment an illumination device includes at least one semiconductor component configured to generate radiation, an optical element and a control circuit, wherein the optical element is configured to direct the radiation into a field of view to be illuminated, wherein the semiconductor component has a plurality of pixels of a first type, each pixel configured to illuminate the field of view in regions with radiation in a visible spectral range, and at least one infrared pixel configured to illuminate the field of view at least in regions with radiation in an infrared spectral range, wherein the pixels of the first type are arranged in a first matrix arrangement and the infrared pixels are arranged in a second matrix arrangement, and wherein the pixels of the first type and the at least one infrared pixel are operable via the control circuit.

Illumination system, electronic device comprising an illumination system and use of an illumination system

A semiconductor light source includes at least one first emission unit, at least one second emission unit, and an optics, wherein the optical system has an inner region that converges radiation from the first emission unit, the optical system has an outer region that expands radiation from the second emission unit, a first light emission region of the inner region completely covers the first emission unit when viewed in plan view, and at least partially covers the second emission unit, a second light emission region of the outer region is partially or completely beside the second emission unit when viewed in plan view, and the inner region and the outer region have differently shaped light entry regions.

Semiconductor light source

An optoelectronic component includes a light emitter including a multiplicity of segments, wherein each segment of the light emitter includes a multiplicity of image points configured to emit light, and an optical element configured to image light emitted by the light emitter into a target region, light emitted by the individual segments of the light emitter is superimposed in the target region, the optical element is subdivided into a number of segments corresponding to a number of segments of the light emitter, each segment of the optical element is respectively arranged over a segment of the light emitter, and the segments of the optical element are respectively configured as double-sided aspherical lenses.

Optoelectronic component

A lighting device and a method for operating a lighting device are disclosed. In an embodiment, a lighting device includes at least one semiconductor component comprising a plurality of pixels and configured to generate light illuminating a field of view and a drive circuit, wherein the field of view is divided into a plurality of regions, wherein each pixel is configured to illuminate a region of the field of view, wherein each pixel comprises at least a first type subpixel and a second type subpixel, and wherein the first type subpixel is configured to emit light of a white color location and the second type subpixel is configured to emit light of a non-white color location.

Lighting device and method for operating a lighting device

An optoelectronic component includes a light emitter including a multiplicity of image points configured to emit light, and an optical element configured to guide light emitted by the light emitter into a target region, wherein a lower side facing toward the light emitter of the optical element is subdivided into four quadrants, each quadrant includes a Fresnel structure having a multiplicity of ridges extending along concentric annular arcs, the ridges of the Fresnel structure in each quadrant are respectively curved around a center shifted relative to a midpoint of the lower side of the optical element, and the center in each quadrant is arranged at a corner of the lower side of the optical element.

A method of operating a camera system having an image sensor including a plurality of activatable image elements, wherein an active image element converts incoming radiation into readable image information, a radiation source including a plurality of activatable radiation elements, each active radiation element emitting electromagnetic radiation, and an integrated circuit coupled to the radiation source, the method including capturing at least one image, wherein during capturing of each single image different subsets of the image elements are successively each once activated and deactivated again after a predetermined exposure time, different subsets of the radiation elements are successively activated by the integrated circuit and deactivated again after a predetermined emission time, and each subset of the image elements is assigned a subset of the radiation elements activated with temporal overlap so that the active radiation elements emit radiation while the associated active image elements receive image information.

Method of operating a camera system and camera system

An optoelectronic lighting device that illuminates a scene to be captured as an image includes a pixelated emitter including a plurality of light emitting pixels that illuminate a scene to be captured as an image, and a driving device configured to individually drive the pixels depending on at least one parameter to illuminate the scene to be recorded with a predetermined illuminance distribution.

Optoelectronic lighting device, method of illuminating a scene, camera and mobile terminal

A white light source includes an arrangement of light-emitting diodes, wherein the light-emitting diodes are subdivided into first light-emitting diodes and second light-emitting diodes, and a conversion element configured to absorb light emitted by the light-emitting diodes and generate converted light with a longer wavelength than the emitted light, wherein the conversion element includes a first luminescent conversion material in a first matrix material, the first matrix material with the first luminescent conversion material is arranged two-dimensionally in a continuous layer above the first and second light-emitting diodes, the conversion element includes a second luminescent conversion material in a second matrix material, and the second matrix material with the second luminescent conversion material is arranged only above the second light-emitting diodes.

White light source and method of producing a white light source

In an embodiment a method includes illuminating a scene in a first illumination by identically driving the emitters of a light source such that first exposures and/or first colour values of segments are ascertained by an image sensor, determining first illumination parameters for the segments of the scene, wherein the first illumination parameters are determined based on the first exposures and/or the first colour values, illuminating the scene in a second subsequent illumination by differently driving the emitters based on the first illumination parameters of the segments such that second exposures and/or second colour values of the segments are ascertained by the image sensor, determining second illumination parameters for the segments of the scene, wherein the second illumination parameters are determined based on the second exposures and/or the second colour values and illuminating the scene in a third subsequent illumination by differently driving the emitters based on the second illumination parameters of the segments.

Method for operating a light source for a camera, light source, camera

An optoelectronic semiconductor chip () is herein described which comprises a non-planar growth layer (), which contains at least one first nitride compound semiconductor material, and an active zone (), which contains at least one second nitride compound semiconductor material and is arranged on the growth layer (), and a top layer (), which is arranged on the active zone (), the growth layer () comprising structure elements () at a growth surface () facing the active zone ().

Optoelectronic semiconductor chip and method for the production thereof

An optoelectronic semiconductor chip, based on a nitride material system, comprising at least one active quantum well, wherein during operation electromagnetic radiation is generated in the active quantum well, the active quantum well comprises N successive zones in a direction parallel to a growth direction z of the semiconductor chip, N being a natural number greater than or equal to 2, the zones are numbered consecutively in a direction parallel to the growth direction z, at least two of the zones have average aluminium contents k which differ from one another, and the active quantum well fulfils the condition:50&#x2266;&#x222b;(35&#x2212;())&#x2212;2.5&#x2212;1.5&#x222b;&#x2266;120.

Growing community of inventors

Neutraubling, Germany

Désirée Queren