Qualcomm Incorporated

Derek Yang

Po-Hung Chen

David Li

Ayan Paul

Chulmin Jung

Changho Jung

Sung Son

Rahul Biradar

Biju Manakkam Veetil

Shivendra Kushwaha

Ravindra Reddy Chekkera

Sei Seung Yoon

Arun Babu Pallerla

Chun-Yen Lin

A memory is provided with a pseudo-differential sense amplifier for single-endedly sensing a first read bit line from a first bank of bitcells. The sense amplifier compares a voltage of the first read bit line to a voltage of a pre-charged second read bit line from a second bank of bitcells to make a bit decision for a read operation through the first read bit line to the first bank of bitcells.

Pseudo-differential de-glitch sense amplifier

A semiconductor device includes: a memory circuit having a plurality of quadrants arranged at corners of the memory circuit and surrounding a bank control component; wherein a first quadrant of the plurality of quadrants includes a first bit cell core and a first set of input output circuits configured to access the first bit cell core, the first quadrant defined by a rectangular boundary that encloses portions of two perpendicular edges of the memory circuit; wherein a second quadrant of the plurality of quadrants includes a second bit cell core and a second set of input output circuits configured to access the second bit cell core, the second quadrant being adjacent the first quadrant, wherein a border between the first quadrant and the second quadrant defines a first axis about which the first quadrant and the second quadrant are symmetrical.

Memory circuit architecture

Certain aspects of the present disclosure are directed to a memory system. The memory system generally includes a word line (WL) driver circuit comprising a transistor coupled between a WL of a memory and a reference potential node. The memory system also includes a clamping circuit having logic configured to generate a control signal to drive a gate of the transistor such that the control signal is floating when the first head switch is open, and a first head switch coupled between a voltage rail and a supply input of the logic.

Techniques for reducing rock bottom leakage in memory

A latch circuit includes an AND-NOR gate, a NAND gate, and a NOR gate. The AND-NOR gate includes a first AND-input configured to receive input data and a second AND-input coupled to an output of the NAND gate. The AND-NOR gate includes a NOR-input coupled to an output of the NOR gate, and an output configured to generate output data. The NAND gate includes a first input coupled to the output of the AND-NOR gate and a second input configured to receive a clock signal. The NOR gate includes a first input coupled to the output of the AND-NOR gate and a second input configured to receive a complementary clock signal. During a first half clock cycle, the AND-NOR gate passes the data from the input to the output. During a second half clock cycle, the feedback configuration of the AND-NOR gate and the NOR gate latches the data.

Apparatus and method for latching data including AND-NOR or OR-NAND gate and feedback paths

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San Diego, CA, United States of America

Derek Yang