Applied Materials, Inc.

Derek Aitken

Bernard F Harrison

Frederick G Plumb

Nicholas J Bright

Christopher P Wright

Michael T Wauk, Ii

Frederick J Robinson

A system for implanting ions of a prearranged chemical species into a plurality of semiconductor wafers. A beam analyzing arrangement receives an ion beam and selective separates various ion species in the beam on the basis of mass to produce an analyzed beam exiting the analyzing arrangement. A wafer scanning arrangement scans a plurality of wafers through the accelerated ion beam. The analyzing arrangement has an ion dispersion plane associated therewith and the source arrangement has an associated ion emitting envelope including an area pf substantial extension in a plane parallel to the ion dispersion plane and produces an ion beam characterized by a beam envelope which retains an area of substantial extension in a plane paralled to ion dispersion plane throughout the region between the source and the analyzing arrangement and by ions entering the analyzing arrangement travelling substantially either toward or from a common apparent line object perpendicular to the ion dispersion plane. The wafer scanning arrangement comprises a scan wheel assembly for carrying a plurality of semiconductor wafers and having a central axis, and a drive arrangement for rotating the scan wheel assembly about the central axis to scan the wafers across the beam in one coordinate direction. A scan arrangement produces relative scanning movement between the scan wheel and the ion beam in another coordinate direction.

Apparatus and methods for ion implantation

A system for implanting ions into a target element including a source arrangement for producing an ion beam; a beam analyzing arrangement for receiving the ion beam and selectively separating various ion species in the beam on the basis of mass to produce an analyzed beam; and a beam resolving arrangement disposed in the path of the analyzed beam for permitting a preselected ion species to pass to the target element. The analyzing arrangement has an ion dispersion plane associated therewith. The source arrangement has an associated ion emitting envelope including an area of substantial extension in a plane parallel to the ion dispersion plane and producing ions entering said analyzing arrangement which are travelling substantially either toward or from a common apparent line object lying in a plane perpendicular to the ion dispersion plane.

A system for post analysis acceleration of an ion beam to a selected energy without beam blow-up. A group of electrodes extablish a non-linear voltage gradient along the beam axis for accelerating and then decelerating the beam to the selected energy level with focusing.

Systems and methds for ion beam acceleration

A method for operating an ion source having a filament-cathode and an anode. The method includes supplying direct current electrical power between the anode and the filament-cathode characterized by substantially constant arc current there between and varying arc voltage on the filament-cathode. Direct current electrical power is also supplied across the filament-cathode. The value of the arc voltage is monitored and the magnitude of electrical power supplied to the filament-cathode is altered in response to detected changes in the arc voltage to return the arc voltage to substantially a preset reference value. The monitoring step and the altering step are carried out at regular preset intervals. The altering step includes deriving an filament power error signal as a prearranged function which includes the difference in values between the monitored arc voltage and the preset reference value multiplied by a predefined integral gain value. The altering step also includes altering the magnitude of electrical power supplied to the filament-cathode by the value of the filament power error signal.

Systems and methods for ion source control in ion implanters

An ion implantation system includes a beam generating arrangement for generating an ion beam characterized by good beam stability and for directing the ion beam along a prearranged path. A beam stopping arrangement is disposed in the path of the beam for stopping and collecting the ions in the beam. A workpiece scanning arrangement is positioned upstream of the beam stopping arrangement for scanning a workpiece through the beam in a prearranged combined fast scan directional motion and a slow scan directional motion with the slow scan directional motion being characterized by an end of scan position in which the ion beam falls completely on the beam stopping arrangement. A dose measuring arrangement is coupled to the beam stopping arrangement and includes arrangements for measuring the ion beam current on the beam stop at the end of scan position of the workpiece scanning arrangement, for calculating the average ion beam current striking the workpiece during each slow scan directional motion as the average of two successive ion beam current measurements before and after the motion, and for calculating the ion dose delivered to the workpiece based on the calculated average ion beam current and know geometrical factors associated with the fast and slow scan motions.

Systems and methods for ion implantation

The use, for heat transfer in evacuable or other equipment, of a thermally conductive fluid, confined by a flexible diaphragm, for heat transfer across the diaphragm between the fluid and a component placed in thermal contact with the diaphragm.

Evacuated equipment

An ion implantation system in which surfaces of ion flight tube and drift tube perpendicular to ion dispersion plane have geometric configuration which precludes sputtering of contaminants onto path through resolving slit.

Growing community of inventors

Dorking, United Kingdom

Derek Aitken