Industrial Technology Research Institute

Nan Ya Technology Corporation

Winbond Electronics Corporation

Promos Technologies, Inc

Der-Sheng Chao

Chien-Min Lee

Wei-Su Chen

Ming-Jinn Tsai

Yi-Chan Chen

Hong-Hui Hsu

Hengyuan Lee

Chih Wei Chen

A phase change memory device is provided. The phase change memory device comprises a substrate. An electrode layer is on the substrate. A phase change memory structure is on the electrode layer and electrically connected to the electrode layer, wherein the phase change memory structure comprises a cup-shaped heating electrode on the electrode layer. An insulating layer is on the cup-shaped heating electrode along a first direction covering a portion of the cup-shaped heating electrode. An electrode structure is on the cup-shaped heating electrode along a second direction covering a portion of the insulating layer and the cup-shaped heating electrode. A pair of double spacers is on a pair of sidewalls of the electrode structure covering a portion of the cup-shaped heating electrode, wherein the double spacer comprises a phase change material spacer and an insulating material spacer on a sidewall of the phase change material spacer.

Phase change memory device and method for fabricating the same

Phase change memory devices and methods for fabricating the same. An exemplary phase change memory device includes a conductive element formed in a dielectric layer. A phase change material layer is formed in the dielectric layer. A conductive layer extends in the dielectric layer to respectively electrically connect the phase change layer and a sidewall of the conductive element.

Phase change memory devices and methods for fabricating the same

Growing community of inventors

Taichung County, Taiwan

Der-Sheng Chao