Taiwan Semiconductor Manufacturing Comp. Ltd.

Der-Ming Kuo

Ching-Hua Chiu

Shih-Hsiang Tai

Tzu-Wen Shih

Meng-Shao Hsieh

A semiconductor device comprises an insulating region surrounding an active area having a channel direction and a transverse direction that is transverse to the channel direction. A source region and a drain region are disposed in the active area, and are spaced apart along the channel direction. A channel is disposed in the active area and is interposed between the source region and the drain region. The channel comprises a two-dimensional electron gas (2DEG). A gate line is oriented along the transverse direction and is disposed on the channel and has a gate width in the channel direction. The gate line comprises gate material. A gate line terminus is disposed at each end of the gate line. Each gate line terminus comprises the gate material. Each gate line terminus has a width in the channel direction that is at least 1.2 time the gate width.

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Hsinchu, Taiwan

Der-Ming Kuo