Etron Technology, Inc.

Piecemakers Technology, Inc.

Der-Min Yuan

Shih-Hsing Wang

Yen-An Chang

Wei-Ming Huang

Chun Shiah

Bor-Doou Rong

Gyh-Bin Wang

Kuang-Fu Teng

Chia-Wei Chang

Feng-Chia Chang

Jen Shou Hsu

Yi-Hao Chang

Chiun-Chi Shen

Yao Yi Liu

Ming-Cheng Liang

Chih-Huei Hu

Chun-Ching Hsia

Kuo-Hua Lee

Peng-Yu Chen

A dynamic random access memory applied to an embedded display port includes a memory core unit, a peripheral circuit unit, and an input/output unit. The memory core unit is used for operating in a first predetermined voltage. The peripheral circuit unit is electrically connected to the memory core unit for operating in a second predetermined voltage, where the second predetermined voltage is lower than 1.1V. The input/output unit is electrically connected to the memory core unit and the peripheral circuit unit for operating in a third predetermined voltage, where the third predetermined voltage is lower than 1.1V.

Dynamic random access memory applied to an embedded display port

A method for testing a semiconductor die is provided. The method includes the following steps: charging a die pad of the semiconductor die to a precharge level; stopping charging the die pad to detect a period of time required for a voltage level of the die pad to change from the precharge level to a reference level, and accordingly generating a detection result; and determining a leakage current of the die pad according to the detection result.

Method for testing semiconductor die pad untouched by probe and related test circuit

An immediate response low dropout regulation system includes a low dropout regulation unit, a tracking voltage generation unit, and a self-driving unit. The low dropout regulation unit is used for generating and outputting an inner output voltage according to a reference voltage. The tracking voltage generation unit is used for generating and outputting a tracking voltage according to the reference voltage. The self-driving unit is coupled to the low dropout regulation unit and the tracking voltage generation unit. When a voltage difference between the tracking voltage and the inner output voltage is greater than a constant times threshold voltage, the self-driving unit provides a compensation current to an output terminal of the low dropout regulation unit.

Immediate response low dropout regulation system and operation method of a low dropout regulation system

A memory access circuit includes a write data circuit and a first write switch circuit. The write data circuit is used for receiving double data rate data or single data rate data, and outputting odd term data and even term data of adjusted double data rate data or adjusted single data rate data. The first write switch circuit is used for outputting the odd term data of the adjusted double data rate data to an odd block of a memory and outputting the even term data of the adjusted double data rate data to an even block of the memory when the write data circuit receives the double data rate data, and outputting the adjusted single data rate data to the even block or the odd block of the memory when the write data circuit receives the single data rate data.

Memory access circuit for double data/single data rate applications

A delay lock loop system includes a timing controller, an OR gate, an input buffer, a pulse generator, and a delay lock loop. The timing controller is used for outputting an external enable signal periodically while a power saving signal is at a logic-low voltage, and being disabled according to a logic-high voltage of the power saving signal. The pulse generator is used for generating a pulse according to the positive edge of the power saving signal. The OR gate is coupled to the timing controller for receiving the power saving signal, the pulse, and the external enable signal, and outputting an enable signal according to the power saving signal and the external enable signal. The delay lock loop is coupled to the OR gate and the input buffer for enabling the delay lock loop again according to the enable signal.

Delay lock loop system with a self-tracking function and method thereof

A memory with disabling circuit includes a memory matrix and a disabling circuit. The memory matrix includes a data input/output end and an output enable end. The disabling circuit includes a fuse and an output end. When the fuse is not blown, the disabling circuit transmits the signal of the data input/output end to the output end according to the signal of the output enable end. When the fuse is blown, the disabling circuit generates a tri-state to the output end. Therefore, external circuits cannot perform actions of reading or writing to access the memory matrix.

Memory having a disabling circuit and method for disabling the memory

A voltage regulator includes a first transistor, a second transistor, a third transistor, a feedback unit, a comparison unit, a first control unit and a second control unit. The first transistor is controlled by the feedback unit and the comparison unit, for stabilizing the voltage of the output node. When the first control unit turns on the second transistor, the voltage of the output node rises. When the first control unit turns off the second transistor, it triggers the second control unit turning on the third transistor, so the first transistor is turned on completely. Therefore, when the third transistor is turned off, the first transistor can be controlled by the feedback unit and the comparison unit for stabilizing the voltage of the output node.

Voltage regulator for memory

The present invention provides a method of reducing current of a memory in a self-refreshing mode and a related memory. The memory includes a word line driver and a controller, and the word line driver includes a transistor. The transistor has a control terminal, a first terminal coupled to a word line, and a second terminal. The method includes: after the memory enters the self-refreshing mode: controlling a voltage difference between the control terminal and the second terminal to correspond to a first value during a self-refreshing operation period; and controlling a voltage difference between the control terminal and the second terminal to correspond to a second value smaller than the first value during a non self-refreshing operation period.

Method of reducing current of memory in self-refreshing mode and related memory

A chip testing circuit is disclosed. The chip testing circuit uses a judging circuit to switch the connection of the data compressing circuit between data compressing base units which compresses 4 XIOs, so as to obtain testing data by one single interface circuit and to increase the testing throughput.

Chip testing circuit

This invention provides a system in package integrated circuit with self-generating reference voltage, in which includes a logic circuit chip and a memory chip. The logic circuit chip generates a plurality of output signals, and the memory chip includes a plurality of input circuit receiving the plurality of output signals from the logic circuit chip. The memory chip further includes a voltage generator generating an input reference voltage based on an output supply voltage. The memory chip is compatible with DDR standard and the plurality of input circuit thereof is compatible with SSTL_2 standard. Wherein, each input circuit comprises a comparator with a first input terminal receiving one of the plurality of output signals and a second input terminal receiving the input reference voltage.

System in package integrated circuit with self-generating reference voltage

A data detecting apparatus and a data detecting method are disclosed in the embodiments of the present invention. The data detecting apparatus operates according to a clock signal with a predetermined period. The data detecting apparatus comprises a plurality of memory cells, a plurality of data lines, a plurality of bit lines, a plurality of sense amplifiers and a pre-charge control circuit.

Data detecting apparatus and methods thereof

Circuits and methods to minimize power required for sensing and precharge of DRAMs have been achieved. A control circuit ensures that during READ operations the duration of sensing of DRAM cell and precharging is kept to a minimum. A test DRAM cell is used to determine the exact time required for data sensing. Furthermore no precharging is performed during WRITE-operations. In case data is changing from '1' to '0' or vice versa data lines are inverted accordingly during WRITE operation.

Growing community of inventors

Taipei County, Taiwan

Der-Min Yuan