Other

Motorola Corporation

Freescale Semiconductor,inc.

Der-Gao Lin

Alexander Hoefler

Jeffrey D Ganger

Chi Nan Brian Li

Kenneth C Weng

Kevin Yun-kang Wu

Wonchon Lin

Liao Yu-Hua Lin

Christopher Sterling Lohn

Won-Yi Lin

A sun visor system includes multiple visors to provide selective window coverage for glare. This system can be employed on the driver side, passenger side, or both. The second visor (), having pivotal device () on support rod (), can be easily connected to the first visor () support rod () to provide pivotal movements between the windshield and side window. These visors, first and second, can be moved together or separately to stored positions, windshield and side window blocked positions, or combinations of both positions to provide window protection from glare quickly and easily for windshield, side window, or both. Also support rod of the visor can be made of flexible material, like gooseneck arm, to further provide flexible adjustments of visor to desired positions to block glare from different angles or positions of vehicle window. This adjustable visor system can be applied to a single sun visor system or multiple visors system.

Adjustable sun visor system for vehicle windshield and side window

An active fuse includes an active fuse geometry () that is used to form both a variable resistor () and a select transistor (). In one embodiment, the active fuse geometry is formed in a portion of an active region () of a semiconductor substrate (), and a select gate () is disposed over an end portion () of the active fuse geometry to form an integral select transistor () for use in programming the active fuse. The use of a shared active fuse geometry within the active region allows for reduced area requirements and improved sensing margins.

Fuse and method for forming

A method of forming a stacked capacitor structure in a semiconductor device, having metal electrode plates. After depositing the bottom electrode layer (26) and the dielectric layer (28) of the capacitor, a rough patterning step is carried out to roughly pattern or shape the bottom electrode layer and the dielectric layer, and to expose the underlying interlayer dielectric (18). A top electrode layer (32) is then blanket deposited, and another, more precise etching step is carried out to form the final shape of the capacitor element, while leaving behind a portion of the top electrode layer on the interlayer dielectric, which forms a metal interconnect (36). In one embodiment, the electrode layers are comprised of materials having a conductivity greater than doped silicon (either poly or monocrystalline), such as a metal.

Method for forming a semiconductor device having a capacitor structure

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Austin, TX, United States of America

Der-Gao Lin