Taiwan Semiconductor Manufacturing Comp. Ltd.

National Taiwan University

Der-Chuan Lai

Chee-Wee Liu

Samuel C Pan

Yu-Cheng Shen

Min-Hung Lee

Pin-Shiang Chen

Hung-Chih Chang

Jhih-Yang Yan

The present disclosure provides a semiconductor device in accordance with some embodiments. The semiconductor device includes a substrate; a gate stack over the substrate. The gate stack includes a ferroelectric layer; a first dielectric material layer; and a first conductive layer. One of the first dielectric material layer and the ferroelectric layer is electrically charged to form a charged layer with fixed charge. The semiconductor device further includes source and drain features formed on the substrate and disposed on sides of the gate stack.

Negative capacitance field effect transistor with charged dielectric material

This disclosure provides a negative capacitance gate stack structure with a variable positive capacitor to implement a hysteresis free negative capacitance field effect transistors (NCFETs) with improved voltage gain. The gate stack structure provides an effective ferroelectric negative capacitor by using the combination of a ferroelectric negative capacitor and the variable positive capacitor with semiconductor material (such as polysilicon), resulting in the effective ferroelectric negative capacitor's being varied with an applied gate voltage. Our simulation results show that the NCFET with the variable positive capacitor can achieve not only a non-hysteretic I-Vcurve but also a better sub-threshold slope.

Semiconductor device and transistor

Semiconductor devices and methods of forming the same are provided. A first gate stack is formed over a substrate, wherein the first gate stack comprises a first ferroelectric layer. A source/channel/drain stack is formed over the first gate stack, wherein the source/channel/drain stack comprises one or more 2D material layers. A second gate stack is formed over the source/channel/drain stack, wherein the second gate stack comprises a second ferroelectric layer.

Field effect transistors and methods of forming same

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Taipei, Taiwan

Der-Chuan Lai