Sony Corporation

Deqing Gao

William E Ford

Florian Von Wrochem

Jurina Wessels

Bjoern Luessem

Heinz-Georg Nothofer

Garbiele Nelles

The present invention relates to a solid-state assembly of layers and to an electric solid-state device comprising such assembly. In one aspect, such electric device is a field effect transistor. In another aspect, such device is a memory device. In yet a further aspect, the device is a sensor device.

Solid-state assembly of layers and an electric device comprising such assembly

The present invention relates to asymmetric molecular bilayers for the use in the junctions of electronic devices, such as crossbar junctions, comprising the general structure E-M( )M-E, wherein Eand Edenote a top and a bottom electrode, Mand Mrepresent functional molecules both forming a self-assembled monolayer (SAM) on said top or bottom electrode, and the symbol ( ) denotes a non-covalent interaction between the two monolayers, resulting in a molecular bilayer, sandwiched between the two electrodes. The electrodes are solid state electrodes and stationary with respect to each other. The present invention also relates to a method of producing such assemblies.

Junctions comprising molecular bilayers for the use in electronic devices

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Stuttgart, Germany

Deqing Gao