The South China University of Technology

Deqi Kong

Guoqiang Li

Wenliang Wang

Liang Chen

Baiyu Su

Yuhui Yang

Zhengliang Lin

Zhiheng Xing

Wenjin Mai

A molybdenum diselenide (MoSe)/InGaN multispectral photoelectric detector includes a substrate, a buffer layer, an InGaN layer and a MoSelayer that are arranged sequentially from bottom to top. The MoSelayer partially covers the InGaN layer. The photoelectric detector further includes a barrier layer and an electrode layer. The barrier layer is provided on the InGaN layer not covered by the MoSelayer and on a part of the MoSelayer. The electrode layer is provided on the barrier layer and covers a part of an exposed portion of the MoSelayer. A preparation method of the detector is further provided. The detector detects red light and blue light at the same time. While realizing a sensitivity enhanced micro-nano structure on a surface of a detector chip, the detector improves quantum efficiency in blue and red bands, and enhances resonant absorption for the blue light and red light.

Molybdenum diselenide (MoSe2)/InGaN multispectral photoelectric detector and preparation method and use thereof

An InGaN/GaN multiple quantum well blue light detector- includes: a Si substrate, an AlN/AlGaN/GaN buffer layer, a u-GaN/AlN/u-GaN/SiN/u-GaN buffer layer, an n-GaN buffer layer, an InGaN/GaN superlattice layer and an InGaN/GaN multiple quantum well layer in sequence from bottom to top. The multiple quantum well layer has a groove and a mesa, the mesa and the groove of the multiple quantum well layer are provided with a SiNpassivation layer. The passivation layer in the groove is provided with a first metal layer electrode with a semicircular cross section, and the passivation layer on the mesa is provided with second metal layer electrode.

InGaN/GaN multiple quantum well blue light detector combined with embedded electrode and passivation layer structure and preparation method and application thereof

The present invention provides a GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate and a preparation method therefor and belongs to the field of rectifiers. The rectifier comprises a silicon substrate, a GaN buffer layer, a carbon-doped semi-insulating GaN layer, a two-dimensional AlN layer, a non-doped GaN layer, a non-doped InGaN layer and a SiNpassivation layer that are stacked in sequence. The rectifier further comprises a mesa isolation groove and a Schottky contact electrode that are arranged at one side. The mesa isolation groove is in contact with the non-doped GaN layer, the non-doped InGaN layer, the SiNpassivation layer and the Schottky contact electrode. The Schottky contact electrode is in contact with the mesa isolation groove and the non-doped GaN layer. The thickness of the two-dimensional AlN layer is only several atomic layers, thus the received stress and polarization intensity are greater than those of the AlGaN layer.

GaN/two-dimensional AlN heterojunction rectifier on silicon substrate and preparation method therefor

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Guangzhou, China

Deqi Kong