Sandisk 3d LLC

Depak C Sekar

April Dawn Schricker

Raghuveer S Makala

Klaus Florian Schuegraf

Xiying Chen

Rewritable switching materials and methods for forming the same are described herein. One embodiment is a storage device comprising a first electrode, a state change element in contact with the first electrode, the state change element comprises ZrYO, and a second electrode in contact with the state change element. A method for forming such a storage device is also disclosed herein. Another embodiment is a storage device comprising a first electrode a state change element in contact with the first electrode, the state change comprises at least one of cerium oxide or bismuth oxide, and a second electrode in contact with the state change element. A method for forming such a storage device is also disclosed herein.

Metal oxide materials and electrodes for Re-RAM

Optimized electrodes for ReRAM memory cells and methods for forming the same are discloses. One aspect comprises forming a first electrode, forming a state change element in contact with the first electrode, treating the state change element, and forming a second electrode. Treating the state change element increases the barrier height at the interface between the second electrode and the state change element. Another aspect comprises forming a first electrode in a manner to deliberately establish a certain degree of amorphization in the first electrode, forming a state change element in contact with the first electrode. The degree of amorphization of the first electrode is either at least as great as the degree of amorphization of the state change element or no more than 5 percent less than the degree of amorphization of the state change element.

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Sunnyvale, CA, United States of America

Depak C Sekar