Samsung Electronics Co., Ltd.

Deoksung Hwang

Jieun Lee

Dongho Yu

Gisung Kim

Seungyoung Seo

Sunghee Han

Wooyoung Choi

Jinwoo Bae

Sunwoo Heo

Woonghwi Bae

Chaelin Yoon

An integrated circuit device includes a substrate having an active region, a conductive landing pad at a first vertical level above the substrate and connected to the active region, a capacitor including a lower electrode at a second vertical level higher than the first vertical level above the substrate, and a conductive multifunction plug including an extended landing pad portion at a third vertical level between the first vertical level and the second vertical level and contacting the conductive landing pad, and an extended lower electrode portion integrally connected to the extended landing pad portion and contacting the lower electrode. The capacitor further includes a dielectric layer covering a surface of the lower electrode and the extended lower electrode portion of the conductive multifunction plug.

Integrated circuit device

A semiconductor device may include bit line structures on a substrate, a contact plug structure on the substrate between the bit line structures, and a capacitor electrically connected to the contact plug structure. The contact plug structure may include a first contact plug, a second contact plug, and a third contact plug sequentially stacked. An upper surface of the second contact plug includes an upper recess. The third contact plug may fill the upper recess, and may protrude above the upper recess. An upper surface of the third contact plug may be higher than a top surface of the bit line structures.

Semiconductor device

A semiconductor device includes first bit lines disposed on a substrate. Buried contacts disposed among first bit lines and connected to the substrate are provided. Landing pads are disposed on the buried contacts. Second bit lines are disposed on a peripheral area of the substrate. Upper surfaces of the second bit lines and the landing pads are coplanar with each other. First insulating patterns are disposed among the second bit lines. Second insulating patterns are disposed among the landing pads. Cell capacitors connected to the landing pads are disposed. The first insulating patterns include an insulating layer different from at least one insulating layer of the second insulating patterns.

Semiconductor device including insulating patterns and method for forming the same

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Suwon-si, South Korea

Deoksung Hwang