Samsung Electronics Co., Ltd.

Deokgu Yoon

Adrita Barari

Damini

Keerthi Kiran Jagannathachar

Helik Kanti Thacker

Ankit Gupta

Sudhanshu Gupta

Atishay Kumar

Sairam Jujjarapu

Akhilesh Sudhir Patankar

Paulami Das

A method for repairing a memory element in a memory device by an electronic device includes configuring a memory element as a graph with a vertex and an edge, a node associated with the memory element being encoded with information related to a fault, determining, from the graph, a repair policy using a probability distribution over one or more of a faulty line and a non-faulty line as predicted by a graph neural network (GNN) based on a final node feature value from message passing stages of the GNN, and determining a value of a state using a probability of the memory element being repaired from a particular state based on a global mean of all the final node feature values predicted by the GNN.

Methods and electronic device for repairing memory element in memory device

A method for repairing a memory device with faulty memory cells. The method includes defining a RA environment comprising a location of each of the faulty memory cells and a plurality of SR and a plurality of SC. The method further includes repairing the faulty memory cells based on an RA training process using the defined RA environment and mapping of the location of each faulty memory cell with the plurality of SC or SR. The method further includes training, based on a determination that indicates the at least one faulty memory cell among the faulty memory cells is left unrepaired and the at least one SC or SR is remaining, a first NN to perform an action for repairing of the faulty memory cells such that a maximum number of faulty memory cells are reparable and a minimum number of SC and SR are utilized during the repairing.

Method and system for repairing faulty cells of memory device

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Suwon-si, South Korea

Deokgu Yoon