Samsung Display Co., Ltd.

Samsung Electronics Co., Ltd.

Deok-Hoi Kim

Seung-Gyu Tae

Zhi-Feng Zhan

Chung Yi

Sung-Hoon Moon

Yu-Bong Won

Kwan-Wook Jung

Pil-mo Choi

Jin-Goo Jung

Sung-Woo Jung

Seung-Hoon Moon

Zhi Feng Zhan

An organic light emitting diode display includes a pixel portion displaying an image and a peripheral portion surrounding the pixel portion, a semiconductor layer including a pixel switching semiconductor layer on the pixel portion on the substrate, a being driving semiconductor layer, and a peripheral switching semiconductor layer on the peripheral portion, a first gate insulating layer on the semiconductor layer, a peripheral switching gate electrode on the first gate insulating layer of the peripheral portion, a second gate insulating layer covering the peripheral switching gate electrode and the first gate insulating layer, a pixel switching gate electrode and a driving gate electrode on the second gate insulating layer of the pixel portion, and a third gate insulating layer covering the pixel switching gate electrode, the driving gate electrode, and the second gate insulating layer.

Organic light emitting diode display and method of manufacturing the same

An organic light emitting diode display device includes a substrate including a pixel portion and a peripheral portion, a semiconductor layer including a pixel switching semiconductor layer and a driving semiconductor layer formed on the pixel portion, and a peripheral switching semiconductor layer formed on the peripheral portion. A first gate insulating layer is formed on the semiconductor layer. A peripheral switching gate electrode is formed on the first gate insulating layer of the peripheral portion, and a pixel switching gate electrode and a driving gate electrode are formed on the first gate insulating layer of the pixel portion. A length of a peripheral switching low concentration doping region formed in the peripheral switching semiconductor layer may be larger than a length of a pixel switching low concentration doping region and a driving low concentration doping region formed in the pixel switching semiconductor layer and the driving semiconductor layer, respectively.

Organic light emitting diode display having high resolution and method of manufacturing the same

A display device includes: an insulating substrate comprising a first region and a second region; a thin-film transistor (TFT) formed on the first region comprising a gate electrode, a source electrode, and a drain electrode; and a storage capacitor formed on the second region, wherein the storage capacitor comprises a first electrode, a second electrode and a first interlayer insulating film, where the first and second electrodes face each other and are made of a transparent conductive material, wherein the interlayer insulating film is interposed between the first electrode and the second electrode, and wherein the first electrode is formed on the entire surface of the first substrate as one body and receives a common voltage, and the second electrode is electrically connected to the drain electrode.

Display device and method of manufacturing the same

A liquid crystal display device is disclosed. The device includes: a first substrate, a thin film transistor formed in a first, non-transmissive region on the first substrate, including a gate electrode, a source electrode and a drain electrode, and a storage capacitor formed in a second, transmissive region on the first substrate, where a first electrode and a second electrode of the storage capacitor are made of a transparent conductive material.

Liquid crystal display device and method of fabrication for the same

A flat panel display device having increased capacitance and a method of manufacturing the flat panel display device are provided. A flat panel display device includes: a plurality of pixel areas, each located at a crossing region of a gate line, a data line, and a common voltage line; a thin film transistor (TFT) located at a region where the gate line and the data line cross each other, the TFT including a gate electrode, a source electrode, and a drain electrode; and a storage capacitor located at a region where the common voltage line and the drain electrode cross each other, the storage capacitor including first, second, and a third storage electrodes.

Method of manufacturing a flat panel display device

A method of manufacturing a flat panel display device includes: forming a semiconductor layer of a thin film transistor (TFT) on a substrate; forming a gate electrode on the semiconductor layer with a gate insulating layer between the gate electrode and the semiconductor layer, and doping source and drain regions of the semiconductor layer with ion impurities; sequentially forming a first conductive layer, a first insulating layer, and a second conductive layer, and forming a capacitor at a distance away from the TFT by patterning the first conductive layer, the first insulating layer, and the second conductive layer; forming a second insulating layer, and forming contact holes passing through the second insulating layer, the contact holes exposing portions of the source and drain regions and the second conductive layer; and forming source and drain electrodes that respectively contact the source and drain regions and the second conductive layer through the contact holes.

Flat panel display device and method of manufacturing the same

A flat panel display apparatus includes a first pixel region on a substrate and defined by an intersection between a first gate line and a data line. The first pixel region includes a first transistor and a first capacitor and is covered by a first pixel electrode. The apparatus includes a second pixel region adjacent to the first pixel region and defined by an intersection between a second gate line and the data line. The second pixel region is covered by a second pixel electrode. The first gate line is positioned between the first pixel electrode and the second pixel electrode. A second capacitor is in the second pixel region, and the second capacitor includes a first transparent conductive layer and a second transparent conductive layer. A transparent shielding portion extends from the second transparent conductive layer of the second capacitor toward the first pixel region to overlap with the first gate line.

Flat panel display apparatus

A method of driving a display panel includes sequentially applying a gate signal to a plurality of gate lines of the display panel during each frame period of a plurality of frame periods, applying data voltages to a plurality of data lines of the display panel, and applying a common voltage to the display panel, a polarity of the common voltage being inverted periodically and asynchronously with a frame period of the frame periods.

Method of driving a display panel, and display device for performing the method

Flat panel display device including a storage capacitor

A color filter display plate includes a substrate, a light blocking member on the substrate, a color filter on the substrate, a covering layer covering the light blocking member and the color filter, a common electrode on the covering layer, a plurality of support members on the common electrode at locations corresponding to the light blocking member, and a main column spacer, a middle column spacer, and an auxiliary column spacer, each of which is on a corresponding one of the support members, the column spacers having different heights and area ratios.

Color filter display panel and flat panel display including the same

In a pixel for displays capable of simplifying manufacturing process, a display apparatus having a simplified pixel structure and a method of manufacturing a cost competitive display device, a display pixel includes a channel layer, first to third signal lines, first and second insulating layers and a pixel electrode. The first signal line is formed on the first insulating layer. The first insulating layer insulates the channel layer from the first signal line. The second insulating layer insulates the first signal line from the second and third signal lines, and includes contact holes. The second and third signal lines are connected to the channel layer through the contact holes. The pixel electrode including indium zinc oxide is formed on the identical layer with the first and second signal lines, and disposed on the second insulating layer. Therefore, manufacturing process is simplified and manufacturing time is reduced.

Display pixel, display apparatus having an image pixel and method of manufacturing display device

In an ion implanting apparatus and a method for implanting ions are provided. The ion implanting apparatus includes an ion source part, a substrate holding part, a beam current adjusting part, a doping quantity measuring part, and an ion beam control part. The ion source part generates an ion beam. The ion beam is irradiated onto the substrate and the ions are implanted into the substrate. The beam current adjusting part is disposed between the ion source part and the substrate holding part, to adjust a beam current. The doping quantity measuring part is disposed on substantially the same surface as the substrate, to measure ion doping quantity. The ion beam control part is connected to the doping quantity measuring part, to control the ion source part and the beam current adjusting part.

Growing community of inventors

Yongin, South Korea

Deok-Hoi Kim