Samsung Electronics Co., Ltd.

Deog-Ja Koo

Seung-Hoon Park

Gyung-Jin Min

A method of manufacturing a semiconductor device is disclosed. In the method, a substrate having a first surface and a second surface is provided. The second surface is opposed to the first surface. A via hole is formed to penetrate the substrate from the first surface toward the second surface. The via hole includes a first portion and a second portion. The first portion has a first sidewall which is substantially perpendicular to the first surface. The second portion has a second sidewall which gradually decreases from the first surface toward the second surface, and has a bottom surface that substantially flat. A seed pattern is formed on the first sidewall of the first portion, the second sidewall of the second portion and the bottom surface of the second portion of the via hole. A first thickness (Vt) of the seed pattern on the first sidewall of the first portion is less than a second thickness (VIt) of the seed pattern on the second sidewall of the second portion. A through via is formed to fill the via hole.

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Yongin-si, South Korea

Deog-Ja Koo