Dongjin Semichem Co., Ltd.

Hynix Semiconductor Inc.

Deog Bae Kim

Jae Chang Jung

Hyun Jin Kim

Geun Su Lee

Jae Hyun Kim

Ki Soo Shin

Jong Kyoung Park

Man Ho Han

Se Jin Choi

A polymer for forming a resist protection film which is used in a liquid immersion lithography process to protect a photoresist layer, a composition for forming a resist protection film, and a method of forming a pattern of a semiconductor device using the composition are disclosed. The polymer for forming a resist protection film includes a repeating unit represented by Formula 1 below.  In Formula 1, Ris a hydrogen atom (H), a fluorine atom (F), a methyl group (&#x2014;CH), a C1-C20 fluoroalkyl group, or a C1-C5 hydroxyalkyl group, Ris a C1-C10 linear or branched alkylene group or alkylidene group, or a C5-C10 cycloalkylene group or cycloalkylidene group, X is wherein n is an integer of 0 to 5 and * denotes the remaining moiety of Formula 1 after excluding X, and m, the stoichiometric coefficient of X, is 1 or 2.

Polymer for forming resist protection film, composition for forming resist protection film, and method of forming patterns of semiconductor devices using the composition

Photoresist monomers, polymers thereof, photoresist compositions containing the same for preventing acid generated in the exposed area during the course of a photolithography process from being diffused to the unexposed area. The line edge roughness and slope pattern are improved when an ultrafine photoresist pattern is formed using photoresist copolymer having a multi-oxygen-containing compound as a repeating unit such as an ethyleneoxy moiety represented by Formula 1 with at least one polymerizable carbon-carbon double bond. In addition, the shape of pattern is improved by eliminating top loss and the adhesion of pattern to the substrate is improved.

Photoresist monomers, polymers and photoresist compositions for preventing acid diffusion

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Deog Bae Kim