Dongjin Semichem Co., Ltd.

Deog-Bae Kim

Jae-Hyun Kim

Sang-Jung Kim

Jae-Woo Lee

Jung-Youl Lee

Hyun-Jin Kim

Geun-Jong Yu

Eun-Kyung Son

Yong-Joon Choi

Yoon-Sik Chung

Jae-hyun Kim

Jung-woo Kim

Jeong-sik Kim

Hyo-Jung Roh

Sang-Jeoung Kim

Jun-Gyeong Lee

Eu-Jean Jang

Dong-Kyu Ju

Jong-Yong Kim

Jae-Hyun Kang

Hwa-Young Kim

Jin Jegal

Hyeon-Jin Kim

An isocyanurate compound for forming an organic anti-reflective coating layer, which has superior stability and etch rate at a high temperature, and which has a high refractive index, is represented by following Formula 1.  In Formula 1, R is independently a hydrogen atom or a methyl group, Ris independently a chain type or ring type saturated or unsaturated hydrocarbyl group of 1 to 15 carbon atoms containing 0 to 6 of hetero atoms, and Rindependently a chain type or ring type saturated or unsaturated hydrocarbyl group of 1 to 15 carbon atoms containing 0 to 15 of hetero atoms, wherein, Rcan have at least two bonding parts, and in the case that Rhas at least two bonding parts, the rest parts except Rof the compounds represented by Formula 1 can connect to the Rto form a polymer structure.

Isocyanurate compound for forming organic anti-reflective layer and composition including same

Disclosed is a method for manufacturing fine patterns of semiconductor devices using a double exposure patterning process for manufacturing the second photoresist patterns by simply exposing without an exposure mask. The method comprises the steps of: forming a first photoresist pattern on a semiconductor substrate on which a layer to be etched is formed; coating a composition for a mirror interlayer on the first photoresist pattern to form a mirror interlayer; forming a photoresist layer on the resultant; and forming a second photoresist pattern which is made by a scattered reflection of the mirror-interlayer and positioned between the first photoresist patterns, by exposing the photoresist layer to a light having energy which is lower than a threshold energy (E) of the photoresist layer without an exposure mask, and then developing the same.

Method for forming fine pattern in semiconductor device

A photosensitive compound as a molecular resist whose size is smaller than conventional polymer for photoresist, and which can form a nano assembly, and a photoresist composition including the same are disclosed. The photosensitive compound represented by the following formula. Also, the present invention provides a photoresist composition comprising 1 to 85 wt % (weight %) of the photosensitive compound; 0.05 to 15 weight parts of a photo-acid generator with respect to 100 weight parts of the photosensitive compound; and 50 to 5000 weight parts of an organic solvent with respect to 100 weight parts of the photosensitive compound. In the formula, n is the number of repetition of an isopropyl oxide (&#x2014;CH(CH)CHO&#x2014;) monomer, and is an integer of 1 to 40, and R is an alkyl group of 1 to 20 carbon atoms or a cycloalkyl group of 3 to 20 carbon atoms.

Photosensitive compound and photoresist composition including the same

The photoresist monomer including an oxime group, a polymer thereof and a photoresist composition containing the same are disclosed. The photoresist monomer is represented by following Formula.  In Formula, R* is independently a hydrogen or a methyl group, and R is a substituted or unsubstituted C&#x2dc;Calkyl group with or without an ether group, or a substituted or unsubstituted C&#x2dc;Chydrocarbon group including an aryl group, a heteroaryl group, a cycloalkyl group or a multicycloalkyl group with or without an ether group, a ketone group or a sulfur.

Monomer, polymer and composition for photoresist

A photoresist monomer having a sulfonyl group, a polymer thereof and a photoresist composition containing the same are disclosed. The photoresist monomer is represented by following Formula. 

Monomer having sulfonyl group, polymer thereof and photoresist composition including the same

A photosensitive polymer which can form a fine circuit pattern by exacting with extreme UV and deep UV, and can improve a line width stability of a pattern by significantly reducing line edge roughness after developing, and a photoresist composition including the same are disclosed. The photosensitive polymer for extreme UV and deep UV includes a repeating unit represented by the following Formula 1,  wherein Ra and Rb are independently alkyl group of 1 to 10 carbon atoms, aryl group of 6 to 10 carbon atoms, or arylalkyl group of 7 to 12 carbon atoms, and can be connected together to form ring, and a and b are mol % of each repeating unit with respect to the total repeating unit constituting the photosensitive polymer, and are 1 to 99 mol % and 1 to 99 mol % respectively.

Photosensitive polymer and photoresist composition

A polymer for forming an organic anti-reflective coating layer between an etching layer and a photoresist layer to absorb an exposure light in a photolithography process and a composition comprising the same are disclosed. The polymer for forming an organic anti-reflective coating layer has repeating units represented by wherein, Ris a substituted or non-substituted alky group of C1 to C5.

Polymer for forming anti-reflective coating layer

A photoresist polymer having a spiro cyclic ketal group, and a photoresist composition including the same is disclosed. The photoresist polymer and the photoresist composition can improve the resolution and the process margin due to its low activation energy of the deprotection reaction of the spiro cyclic ketal group, and can produce fine photoresist patterns due to its low PEB (Post Exposure Baking) temperature sensitivity.

Photoresist monomer having spiro cyclic ketal group, polymer thereof and photoresist composition including the same

A polymer for forming an organic anti-reflective coating layer between an etching layer and a photoresist layer to absorb an exposure light in a photolithography process and a composition comprising the same are disclosed. The polymer for forming an organic anti-reflective coating layer has a repeating unit represented by wherein, Ris hydrogen or methyl group, and Ris a substituted or non-substituted alky group of C1 to C5. The composition for forming the organic anti-reflective coating layer includes the polymer having the repeating unit represented by above Formulas; a light absorber; and a solvent.

The present invention relates to a chemically amplified polymer having a pendent group with dicyclohexyl bonded thereto, a process for the preparation thereof, and a resist composition comprising it, and more particularly, to a novel (meth)acrylic or norbornene carboxylate compound with dicyclohexyl bonded thereto, a process for the preparation thereof, a chemically amplified polymer synthesized therewith, and a positive photoresist composition for ArF comprising said polymer, with high resolution and excellent etching resistance.

Chemically amplified polymer having pendant group with dicyclohexyl and resist composition comprising the same

A polymer for forming an organic anti-reflective coating layer between an etching layer and a photoresist layer to absorb an exposure light in a photolithography process and a composition comprising the same are disclosed. The polymer for forming an organic anti-reflective coating layer has repeating units represented by wherein, R is a substituted or non-substituted alky group of C1 to C5.

A photosensitive polymer for forming high-resolution fine circuit patterns with an exposure light source of a short wavelength, and a chemically amplified photoresist composition including the polymer, are disclosed. The photosensitive polymer is represented by the following Formula 1, wherein Ris a hydrogen atom, Ris a hydrogen atom, Ris a chlorine atom, a bromine atom, hydroxy, cyano, t-butoxy, CHNH, CONH, CH&#x2550;NH, CH(OH)NHor C(OH)&#x2550;NH group, Ris a hydrogen atom or methyl group, each of 1-x-y-z, x, y and z is a degree of polymerization of each repeating unit constituting the photosensitive polymer, x, y and z are 0.01 to 0.8, respectively, and n is 1 or 2.

Photosensitive polymer and chemically amplified photoresist composition including the same

The present invention relates to a polymer for a chemically amplified resist and a resist composition using the same. The present invention provides a polymer represented by the Formula (1) and a chemically resist composition for extreme ultraviolet light comprising the same. The chemically amplified resist composition comprising the polymer represented by the formula (1) of the present invention responds to mono wavelength in a micro-lithography process and can embody a micro-pattern of high resolution on a substrate.

Polymer for chemically amplified resist and a resist composition using the same

The present invention relates to a polymer for a chemically amplified resist and a resist composition using the same. The present invention provides a polymer represented by the Formula (1) and a chemically resist composition for deep ultraviolet light comprising the same, The chemically amplified resist composition comprising the polymer represented by the formula (1) of the present invention responds process and can embody a micro-paten of high resolution on a substrate.

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Kyungki-do, South Korea

Deog-Bae Kim