Rohm & Haas Electronic Materials LLC

Rohm and Haas Company

Shipley Company LLC

Dow Global Technolgoies LLC

Rohm and Haas Electronics Materials LLC

Ceres Technologies, Inc.

Deodatta Vinayak Shenai-Khatkhate

Robert A Ware

Ronald L DiCarlo, Jr

Michael Brendan Power

Artashes Amamchyan

Stephen Gerard Maroldo

Francis Lipiecki

Egbert Woelk

Qing Min Wang

Christopher P Christenson

John G Pendergast, Jr

Hua Bai

Ravindra S Dixit

Curtis D Modtland

Huazhi Li

Kenneth M Crouch

Robert F Polcari

Stephen J Manzik

Michael Timmons

Qin-Min Wang

Charles J Marsman

Ronald L DiCarol, Jr

James Edward Felton

Michael L Timmons

Jr John G Pendergast

Ronald L Dicarlo

Charles R Marsman

Disclosed herein is a delivery device comprising a chamber; a gas inlet; a gas outlet; and a dip tube contained within the chamber and having an upper portion and a lower portion, the upper portion of the dip tube being in fluid communication with the gas inlet and being operative to permit the entry of a carrier gas; the lower portion of the dip tube extending into the chamber, the lower portion of the dip tube terminating in an outlet end; and a sleeve; where the sleeve has a first end and a second end; the first end being in an interference fit with the lower portion of the dip tube; and where the sleeve vibrates upon being subjected to a disturbance.

Delivery device, methods of manufacture thereof and articles comprising the same

An apparatus for continuously manufacturing organometallic compounds is provided where the apparatus has a source of a first reactant stream wherein the first reactant comprises a metal; a source of a second reactant stream; a laminar flow contacting zone for cocurrently contacting the first reactant stream and the second reactant stream; a mixing zone comprising a turbulence-promoting device; and a heat transfer zone.

Organometallic compound preparation

A method of continuously manufacturing organometallic compounds is provided where two or more reactants are conveyed to a reactor having a laminar flow contacting zone, a heat transfer zone, and a mixing zone having a turbulence-promoting device; and causing the reactants to form the organometallic compound.

Methods of purifying crude cyclopentadienyl magnesium compounds using a scavenging agent are provided. The purified cyclopentadienyl magnesium compounds have very low levels of metallic impurities.

Organometallic compound purification

Methods of vapor depositing metal-containing films using certain organometallic compounds containing a carbonyl-containing ligand are disclosed.

Organometallic compounds

Delivery devices for delivering solid precursor compounds in the vapor phase to reactors are provided. Such devices include a precursor composition of a solid precursor compound with a layer of packing material disposed thereon. Also provided are methods for transporting a carrier gas saturated with the precursor compound for delivery into such CVD reactors.

Delivery device

Compositions including an amido-group-containing vapor deposition precursor and a stabilizing additive are provided. Such compositions have improved thermal stability and increased volatility as compared to the amido-group-containing vapor deposition precursor itself. These compositions are useful in the deposition of thin films, such as by atomic layer deposition.

Precursor compositions and methods

A method of preparing an ultra-pure organometallic compound comprising using a microchannel device and ionic liquid solvent to produce an ultra-pure alkylmetal compound for processes such as chemical vapor deposition.

Method of preparing organometallic compounds

This invention relates to methods of removing impurities from compounds having similar volatilities to form ultra high purity compounds.

Purification process using microchannel devices

Methods of forming metal-containing layers are provided where heteroleptic organometallic compounds containing at least one formamidinate ligand are conveyed in a gaseous form to a reactor; and films comprising a metal are deposited on a substrate. These heteroleptic organometallic compounds have improved properties over conventional vapor deposition precursors. Such compounds are suitable for use as vapor deposition precursors including direct liquid injection. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds or their solutions in organic solvents.

Method of forming metal-containing layer using organometallic compounds

Methods of doping a III-V compound semiconductor film are disclosed.

Doping method

A method of preparing an ultra-pure metal amidinate compound comprising using a microchannel device for synthesis in reacting a metal halide solution with a lithium amidinate solution to produce an ultra-pure alkylmetal compound for processes such as chemical vapor deposition.

Organometallic compounds suitable for use as vapor phase deposition precursors for Group IV metal-containing films are provided. Methods of depositing Group IV metal-containing films using certain organometallic precursors are also provided. Such Group IV metal-containing films are particularly useful in the manufacture of electronic devices.

Growing community of inventors

Danvers, MA, United States of America

Deodatta Vinayak Shenai-Khatkhate