Semequip, Inc.

Dennis Manning

Thomas N Horsky

Richard David Goldberg

Edward K McIntyre

Kevin Cook

Brian Bernstein

Erin Dyker

An ion implantation device and a method of manufacturing a semiconductor device is described, wherein ionized phosphorus-containing molecular clusters are implanted to form N-type transistor structures. The clusters are implanted to provide N-type doping for Source and Drain structures and Pocket or Halo formation, and for counter-doping Poly gates. These doping steps are critical to the formation of NMOS transistors. The molecular cluster ions have the chemical form AnHx, or AnRHx, where n and x are integers with 4&#x3c;n and x&#x2267;0, and A is either As or P, and R is a molecule not containing phosphorus or arsenic, which is not injurious to the implantation process.

Ion implantation with molecular ions containing phosphorus and arsenic

The invention features in-situ cleaning process for an ion source and associated extraction electrodes and similar components of the ion-beam producing system, which chemically removes carbon deposits, increasing service lifetime and performance, without the need to disassemble the system. In particular, an aspect of the invention is directed to an activating, catalytic, or reaction promoting species added to the reactive species to effectively convert the non-volatile molecular residue into a volatile species which can be removed by conventional means.

Method for extending equipment uptime in ion implantation

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Commerce, OK, United States of America

Dennis Manning