Western Digital Technologies, Inc.

Dennis M Rolland

David Scott Seekins

A device includes a non-volatile solid-state memory array comprising a plurality of blocks, each of the plurality of blocks configured to store data in a single-bit per cell mode or a multiple-bit per cell mode, and a controller. The controller is configured to receive write data from a host device, program the write data to a first block of the plurality of blocks of the memory array using the single-bit per cell mode, and perform a data consolidation operation on the first block at least in part by programming at least a portion of the write data together with data stored in a separate second block of the memory array to a third block of the memory array using the multiple-bit per cell mode.

Corruption-preventative programming in solid-state data storage

Systems and methods are disclosed for programming data in a non-volatile memory array are disclosed. Certain embodiments provide a non-volatile solid-state memory array and a controller configured to receive write data from a host device, program the write data to a first block of the memory array in a lower-page-only (LPO) programming mode, and perform a data consolidation operation on the first block, wherein said performing garbage collection comprises programming at least a portion of the write data to a second block not in LPO programming mode.

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Santa Ana, CA, United States of America

Dennis M Rolland