Hewlett-packard Development Company, L.p.

Hewlett-packard Company

Dennis M Lazaroff

Peter James Fricke

Heon Lee

Andrew Koll

Andrew L Van Brocklin

Peter Mardilovich

David A Champion

Gregory Scott Herman

Kurt M Ulmer

Eric Lee Nikkel

Michael G Monroe

Neal W Meyer

David Punsalan

Alfred I-Tsung Pan

Robert G Walmsley

Christopher C Beatty

James O'Neil

James E Ellenson

Kenneth Michael Kramer

Brian D Homeijer

Rodney L Alley

Sara Jensen Homeijer

Kenneth L Vandenberghe

Ken Kramer

Jim Ellenson

David Pursalan

Andy Van Brockin

The present disclosure includes methods of forming capacitive sensors. One method includes forming a first electrode array of the capacitive sensor on a first structure. Forming the first electrode array can include: forming a dielectric material on a substrate material; forming an electrode material on the dielectric material; removing portions of the electrode material to form a number of electrodes separated from each other; and removing at least a portion of the dielectric material from between the number of electrodes. The method can include bonding the first structure to a second structure having a second electrode array of the capacitive sensor formed thereon such that the number of electrodes of the first electrode array face a number of electrodes of the second electrode array.

Methods of forming capacitive sensors

A method of fabricating a bridge beam of an inkjet printhead employs a cavity formed under the bridge beam and an etch-stop layer that limits a back-surface recess formation. The method includes forming a cavity that connects between a bottom of a pair of trenches in and extending from a front surface of a substrate and depositing an etch-stop layer at a bottom of the cavity. The method further includes forming a recess in a back surface of the substrate, the recess exposing the etch-stop layer and the etch-stop layer limiting a depth of the formed recess. The method further includes removing the exposed etch-stop layer to connect the cavity and the recess, the bridge beam being a portion of the substrate above the formed cavity and between the trenches.

Inkjet printhead bridge beam fabrication method

A method of forming a MEMS device includes depositing a conductive material on a substructure, forming a first sacrificial layer over the conductive material, including forming a substantially planar surface of the first sacrificial layer, and forming a first element over the substantially planar surface of the first sacrificial layer, including communicating the first element with the conductive material through the first sacrificial layer. In addition, the method includes forming a second sacrificial layer over the first element, including forming a substantially planar surface of the second sacrificial layer, forming a support through the second sacrificial layer to the first element after forming the second sacrificial layer, including, filling the support, and forming a second element over the support and the substantially planar surface of the second sacrificial layer. As such, the method further includes substantially removing the first sacrificial layer and the second sacrificial layer, thereby supporting the second element relative to the first element with the support.

MEMS device and method of forming MEMS device

A ceramic film is useful as ion-conducting ceramics, electrodes, hard ceramic coatings, transparent conducting oxides, transparent semiconducting oxides, ferroelectric oxides, and dielectric oxides. The ceramic film may be produced from a liquid precursor solution.

Patterned ceramic films and method for producing the same

A method of making a fuel cell includes the following steps. A pattern is placed on a base surface to create a predetermined topography on the base surface. An anode layer, a cathode layer and/or an electrolyte layer is/are deposited over the pattern. Areas of higher topography are removed from areas of lower topography using chemical mechanical planarization to form a predetermined fuel cell structure.

Fuel cell and method of manufacturing same using chemical/mechanical planarization

Various embodiments of the invention are directed toward a fuel cell assembly comprising a fuel cell casing and one or more fuel cell elements comprised of electrode and electrolyte material. The fuel cell casing is configured with threads and the fuel cell elements can be threadingly engaged in the fuel cell casing.

Threaded fuel cell assembly

A memory structure that includes a first electrode, a second electrode, a third electrode, a control element disposed between the first electrode and the second electrode, and a memory storage element disposed between the second electrode and the third electrode. At least one of the control element and memory storage element is protected from contamination by at least one of the first electrode, second electrode and third electrode.

Memory structures

A method of forming a MEMS device includes depositing a conductive material on a substructure, forming a first sacrificial layer over the conductive material, including forming a substantially planar surface of the first sacrificial layer, and forming a first element over the substantially planar surface of the first sacrificial layer, including communicating the first element with the conductive material through the first sacrificial layer. In addition, the method includes forming a second sacrificial layer over the first element, including forming a substantially planar surface of the second sacrificial layer, forming a support through the second sacrificial layer to the first element after forming the second sacrificial layer, including filling the support, and forming a second element over the support and the substantially planar surface of the second sacrificial layer. As such, the method further includes substantially removing the first sacrificial layer and the second sacrificial layer, thereby supporting the second element relative to the first element with the support.

Method of forming MEMS device

Tunnel-junction structures are fabricated by any of a set of related methods that form two or more tunnel junctions simultaneously. The fabrication methods disclosed are compatible with conventional CMOS fabrication practices, including both single damascene and dual damascene processes. The simultaneously formed tunnel junctions may have different areas. In some embodiments, tub-well structures are formed with sloped sidewalls. In some embodiments, an oxide-metal-oxide film stack on the sidewall of a tub-well is etched to form the tunnel junctions. Memory circuits, other integrated circuit structures, substrates carrying microelectronics, and other electronic devices made by the methods are disclosed.

Tunnel-junction structures and methods

A low heat loss and small contact area electrode structure for a phase change media memory device is disclosed. The memory device includes a composite electrode that includes a dielectric mandrel that is connected with a substrate and having a tapered shape that terminates at a vertex. An electrically conductive material conformally covers the dielectric mandrel and terminates at a tip. A first dielectric layer covers all of the composite electrode except an exposed portion of the composite electrode that is adjacent to the tip. A phase change media is in contact with the exposed portion. The exposed portion is only a small percentage of an overall surface area of the composite electrode so that a contact footprint between the exposed portion and the phase change media is small relative to a surface area of the phase change media and Joule heat transfer from the phase change media into the composite electrode is reduced.

Low heat loss and small contact area composite electrode for a phase change media memory device

A low heat loss and small contact area electrode structure for a phase change media memory device is described. The memory device includes a composite electrode that includes a dielectric mandrel that is connected with a substrate and having a tapered shape that terminates at a vertex. An electrically conductive material conformally covers the dielectric mandrel and terminates at a tip. A first dielectric layer covers all of the composite electrode except an exposed portion of the composite electrode that is adjacent to the tip. A phase change media is in contact with the exposed portion. The exposed portion is only a small percentage of an overall surface area of the composite electrode so that a contact footprint between the exposed portion and the phase change media is small relative to a surface area of the phase change media and Joule heat transfer from the phase change media into the composite electrode is reduced.

The invention includes an electronic memory structure. The electronic memory structure includes a substrate. A substantially planar first conductor is formed adjacent to the substrate. An interconnection layer is formed adjacent to the first conductor. A phase change material element is formed adjacent to the interconnection layer. The interconnection layer includes a conductive interconnect structure extending from the first conductor to the phase change material element. The interconnect structure includes a first surface physically connected to the first conductor. The interconnect structure further includes a second surface attached to the phase change material element. The second surface area of the second surface is substantially smaller than a first surface area of the first surface. A substantially planar second conductor is formed adjacent to the phase change material element.

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Corvallis, OR, United States of America

Dennis M Lazaroff