Lucent Technologies Inc.

At&t Bell Laboratories

At+t Corp.

At&t Technologies, Inc.

Dennis L Krause

Ajibola O Ibidunni

Trac Nguyen

Robert P Frankenthal

Douglas B Johnson

Aaron L Frank

David C Wojewoda

Tae Yong Kim

Elaine Fontes Parnagian

Chiou T Chen

A compact optical fiber cleaning apparatus includes a base plate and a retaining plate having a plurality of apertures. The base plate is configured to hold one or more resilient absorbers situated under the retaining plate. In operation, a wiper, such as a piece of lint-free cloth, is placed over the absorber and the retainer is closed. When closed, the plurality of apertures within the retainer allow wiper material to be forced through the apertures by the resilient absorber material. Each section of exposed wiper may be employed for a different cleaning purpose. For example, a solvent may be applied to one exposed section of the wiper, or to the underlying absorber material, with another exposed section of the wiper left dry. A technician may then clean an optical fiber endface, by first wiping the endface on the &ldquo;wet&rdquo; section of wiper material, then wiping the endface on the &ldquo;dry&rdquo; section of wiper material.

Compact apparatus for cleaning optical fiber endfaces

An optical fiber cleaner includes a base having a well supported within an annular section. An absorbent material, such as a sponge or cotton ball, may be located within the well of the base. A cover mates with the base and holds a wipe in a preferred position over the well. The cover includes an aperture through which the wipe may be accessed. The cover may also include a hinged element, or lid, that closes over the aperture within the cover when the cleaner is not in use. The base may itself be an element of the lid of a push-pump mechanism. In such case, the well within the base is operationally connected to receive solvents from the pumping mechanism and the pumping mechanism, including the base, forms a cover for a solvent reservoir, such as a non-reactive bottle.

Apparatus for cleaning optical fiber endfaces

The specification describes a metallization system for barium nanotitanate substrates that provides a combination of high dielectric properties and excellent metal adhesion. It comprises Ti, Pd or Ti/Pd alloy, and copper.

Thin film metallization for barium nanotitanate substrates

Multilayer circuit devices include a plurality of metallized patterns thereon, said patterns being separated by a polymeric dielectric film. The various metallized patterns are interconnected by means of microvias through the polymeric film or films. Each of the metallizations is a composite including in succession from the substrate or from the polymeric film, a layer of titanium (Ti), a layer of titanium and palladium alloy (Ti/Pd), a layer of copper (Cu), and a layer of titanium and palladium alloy (Ti/Pd). The Ti-Ti/Pd-Cu-Ti/Pd composite is hereinafter referred to as TCT. The adhesion between the polymeric film and the top Ti/Pd layer is better than that between the polymer and gold (Au) and comparable to that between the polymer and an adhesion promoted Au layer. Use of the TCT metallization also results in additional cost reduction due to the elimination of Ni and Au layers on top of the Cu layer.

Metallization for polymer-dielectric multichip modules

Multilayer circuit devices include a plurality of metallized patterns thereon, said patterns being separated by a polymeric dielectric film. The various metallized patterns are interconnected by means of microvias through the polymeric film or films. Each of the metallizations is a composite including in succession from the substrate or from the polymeric film, a layer of titanium (Ti), a layer of titanium and palladium alloy (Ti/Pd), a layer of copper (Cu), and a layer of titanium and palladium alloy (Ti/Pd). The Ti--Ti/Pd--Cu--Ti/Pd composite is hereinafter referred to as TCT. The adhesion between the polymeric film and the top Ti/Pd layer is better than that between the polymer and gold (Au) and comparable to that between the polymer and an adhesion promoted Au layer. Use of the TCT metallization also results in additional cost reduction due to the elimination of Ni and Au layers on top of the Cu layer.

Metallization for polymer-dielectric multichip modules including a Ti/Pd

A magnetron sputtering apparatus is disclosed having a cooling block including an inner conduit. A target is provided having first and second grooves in a first surface thereof. At least a portion of the first surface of the target is in contact with a first surface of the cooling block. A first pole piece is positioned within the first groove, and a second pole piece is positioned within the second groove. A first magnet is provided having a first polarity in contact with the first pole piece. A second magnet is provided having the opposite polarity of the first magnet in contact with the second pole piece. A plate is provided in contact with a second surface of the cooling block and the first and second magnets. Means are provided for supplying a coolant to the inner conduit of the cooling block and for applying a voltage to the cooling block. The first and second pole pieces conduct a magnetic flux produced by the first and second magnets towards an opposite second surface of the target.

Method and apparatus for planar magnetron sputtering

A new metallization is described which is a composite of subsequent metal layers beginning with a layer of titanium and having in an ascending order the following composition: Ti--TiPd--Cu--Ni--Au. TiPd is an alloy of titanium and palladium containing from 0.3 to 14 weight percent Pd, by the weight of the alloy. The TiPd alloy is etchable in an aqueous HF solution containing from 0.5 to 2.0 and higher, preferably from 0.5 to 1.2 weight percent HF. The use of the TiPd alloy avoids the occurrence of Pd residues remaining after the etching of Ti layer and lift-off (rejection etching) of Pd layer in a prior art Ti--Pd--Cu--Ni--Au metallization. Ti and TiPd layers are present in a thickness ranging from 100 to 300 nm and from 50 to 300 nm, respectively, and in a total minimum thickness needed to maintain bonding characteristics of the metallization. The metallization is suitable for use in various circuits including integrated circuits (ICs), hybrid integrated circuits (HICs), film integrated circuits (FICs), multi-chip modules (MCMs), etc.

Copper-based metallizations for hybrid integrated circuits

A new metanization is described which is a composite of subsequent metal layers beginning with a layer of titanium and having in an ascending order the following composition: Ti - TiPd - Cu - Ni - Au. TiPd is an alloy of titanium and palladium containing from 0.3 to 14 weight percent Pd, by the weight of the alloy. The TiPd alloy is etchable in an aqueous BF solution containing from 0.5 to 2.0 and higher, preferably from 0.5 to 1.2 weight percent BF. The use of the TiPd alloy avoids the occurrence of Pd residues remaining after the etching of Ti layer and liftoff (rejection etching) of Pd layer in a prior art Ti-Pd-Cu-Ni-Au metanization. Ti and TiPd layers are present in a thickness ranging from 100 to 300 nm and from 50 to 300 nm, respectively, and in a total minimum thickness needed to maintain bonding characteristics of the metallization. The metallization is suitable for use in various circuits including integrated circuits (ICs), hybrid integrated circuits (HICs), film integrated circuits (FICs), multi-chip modules (MCMs), etc.

A target which is a good conductor of heat and electricity is plasma sprayed with a weakly conducting material such as a metallic oxide. The target is then employed in a magnetron sputtering apparatus to sputter the material sprayed onto the target onto a substrate. The technique permits use of power densities and target sizes and shapes which are advantageous for sputtering substrates having large surface areas.

High temperature superconductor deposition by sputtering

An electrical substrate circuit device (10) includes a thick film crossunder conductor (14) and a thin film crossover conductor (16). An intermediate portion of the thick film conductor (14) is covered with a coating (28) of electrically insulating glaze material and opposite end portions (18) of the thick film conductor are electrically connected to thin film contact pads (20) by electrically conductive contact portions (22) in an electrically insulating protective tantalum pentoxide film layer (24). The electrically conductive contact portions (22) are produced by gold material in the end portions (18) of the thick film conductor (14) diffusing into overlying portions of a tantalum film (30) as the tantalum film is converted to the protective tantalum pentoxide film layer (24) by thermal oxidation.

Film-type electrical substrate circuit device and method of forming the

An argon-nitrogen sputtering gas mixture is introduced into a cylindrical sputtering chamber (20) at essentially the geometric center of the chamber. The gas mixture then disperses through open areas in the chamber about upper and lower edges of a cylindrical tantalum target (24) and homogeneously into a sputtering area (30) between the target and a plurality of substrates (12) on a rotatable carrousel (28). As tantalum material then is sputtered from the target onto the substrates (12), tantalum films (16), which are uniformly doped with nitrogen, are formed on the substrates. A target cooling cell assembly (26), comprising a pair of C-shaped cooling cells (92) having independent cooling water input-and-return systems (95), provides improved cooling of the target during the sputtering operation.

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Atkinson, NH, United States of America

Dennis L Krause