Asm America, Inc.

Epsilon Technology Corporation

Advanced Semiconductor Materials America, Inc.

Other

Soitec

Epsilon Limited Partnership

Dennis L Goodwin

McDonald Robinson

Richard Crabb

Mark R Hawkins

Armand P Ferro

Ivo Johannes Raaijmakers

Albert E Ozias

Wiebe B deBoer

Eric R Wood

Loren R Jacobs

David R Rodriguez

Ken O'Neill

Allan Doley

Kenneth O'Neill

Gerben Vrijburg

Chantal Arena

Wayne L Johnson

Ravinder K Aggarwal

Michael W Halpin

Christiaan J Werkhoven

Ronald Thomas Bertram, Jr

Mike Halpin

Ed Lindow

James A Alexander

Aage Olsen

Jim Alexander

Allan D Doley

Jack D Carrell

This invention provides gas injector apparatus that extends into a growth chamber in order to provide more accurate delivery of thermalized precursor gases. The improved injector can distribute heated precursor gases into a growth chamber in flows that are spatially separated from each other up until they impinge on a growth substrate and that have volumes adequate for high-volume manufacture. Importantly, the improved injector is sized and configured so that it can fit into existing commercial growth chambers without hindering the operation of mechanical and robot substrate-handling equipment used with such chambers. This invention is useful for the high-volume growth of numerous elemental and compound semiconductors, and particularly useful for the high-volume growth of Group III-V compounds and GaN.

Apparatus for delivering precursor gases to an epitaxial growth substrate

A reactor for processing semiconductor wafers and the like is provided. The reactor employs one or more rotating components to more evenly distribute temperature or gases within the chamber. In one embodiment, the reactor is provided with rotating reflectors, which reflect the heat generated from radiant heat lamps onto a stationary wafer in a reaction chamber. The rotation of the reflectors provides for a more uniform temperature distribution on the wafer. In another embodiment, the reaction chamber itself is rotated while the wafer is kept stationary. In another embodiment, a rotating showerhead is provided above the wafer through which gases flow to deposit onto the wafer in a uniform manner.

Rotating semiconductor processing apparatus

Method of processing a semiconductor wafer in a reaction chamber with a rotating component

An apparatus and method for reducing particles in reactors. The apparatus includes an enclosure with a wafer handling chamber connected by an isolation gate valve to a processing chamber. Pipes deliver purge gas into the wafer handling chamber to eliminate particles from the enclosure. A pilot operated back pressure regulator regulates the delivery and removal of the purge gas. The apparatus actuates the isolation gate valve in a controlled rate to reduce disturbances from the purge gas entering into the enclosure. A Bernoulli wand is provided for lifting and holding a single semiconductor wafer. A dome loaded regulator actuated by a pilot gas is used to control the ramp rates of gas to the Bernoulli wand. The ramping rates of the Bernoulli wand gas can be controlled by restrictions and check valves in the pilot gas line. The apparatus also utilizes ionizers in the purge gas lines entering the wafer handling chamber and load locks. Through the use of an alpha particle emission source in the purge gas line prior to the load lock and wafer handling chamber, the purged gas molecules are ionized. The ionized gas is conductive and therefore discharges static so that wafers are no longer attracted to each other by electrostatic force. In addition, the apparatus includes means for reducing gas flow turbulence when switching valves within the reactor.

Substrate handling chamber

A dual-arm wafer hand-off assembly includes a pair of pickup arms for transferring wafers within a wafer processing system. The two pickup arms are adapted to move such that the wafer on one of the arms can be positioned over the other arm and handed off. In one version, a Bernoulli-style wand translates along a linear guideway and may be positioned over a paddle-style pickup arm. The wafer carried by the Bernoulli wand can be handed off to the paddle by shutting off the flow of gas from the Bernoulli wand jets. The two pickup arms may be mounted on linear slides and adapted to translate between a load/unload chamber and a processing chamber, or the guideway may be adapted to rotate to allow transfer of wafers to multiple processing chambers in a cluster system. One of the pickup arms is preferably an all-quartz Bernoulli-style pickup arm having a proximal arm portion and a distal wand. The arm portion is formed by a pair of juxtaposed plates with a gas passage therethrough, and the distal wand is also formed by a pair of juxtaposed plates with a plurality of gas passages therethrough. The arm portion and the wand are fused together at their junction region. A wafer stop element is formed by a single quartz rod and is clipped to the arm portion to present a plurality of wafer stop pegs at a proximal periphery of the wand. The wafer stop element may be rapidly installed or removed without fasteners or bonding.

Dual arm linear hand-off wafer transfer assembly

Wafer transfer arm stop

A platform is held atop a vertically moveable dual position leveling base by three draw screws, three push screws, and three spring-loaded pins. The leveling base is configured to secure and orient the platform such that an upper surface of the platform is substantially horizontal with allowance for adjustments in each of two positions. The platform is pushed upwardly relative to the base by the spring-loaded pins. The orientation of the platform in one position is adjusted by the three draw screws, which pull the platform down against the upward force of the spring-loaded pins. The base also has an upper position in which the platform is pressed into sealing engagement with a lower mating surface of a chamber. Three adjustable push screws provide the desired platform orientation by limiting the movement of the platform towards the base.

Dual orientation leveling platform for semiconductor apparatus

A system for facilitating wafer transfer comprises a susceptor unit consisting of an inner susceptor section which rests within an outer susceptor section. A vertically movable and rotatable support spider located beneath the susceptor unit can rotate into positions to engage either the inner or the outer susceptor sections. When the inner section is engaged, the support spider lifts the inner section vertically out of the outer section. When the outer section is engaged, the support spider raises and lowers the entire susceptor unit. A robotic arm end effector engaging only the lower surface of the outer edge of the wafer permits hot wafer pick-up and unloading by the inner susceptor section. Several end effectors are disclosed that minimize non-uniform thermal effect on the substrate.

Substrate transfer system for semiconductor processing equipment

An apparatus and method for reducing particles in reactors. The apparatus includes an enclosure for processing the semiconductor wafers. The enclosure has a wafer handling chamber connected by an isolation gate valve to a processing chamber. Additionally, the apparatus includes pipes for delivering a purge gas into the wafer handling chamber. The purge gas is used to eliminates particles from the enclosure. The apparatus also includes a pilot operated back pressure regulator for regulating the delivery and removal of the purge gas from the enclosure. The apparatus actuates the isolation gate valve in a controlled rate to reduce disturbances from the purge gas entering into the enclosure. The apparatus also includes a Bernoulli wand for lifting and holding a single semiconductor wafer. A dome loaded regulator is used to control the ramp rates of the gas to the Bernoulli wand. The dome loaded regulator is actuated by a pilot gas. The ramp up and ramp down rates of the Bernoulli wand gas can be control by a multitude of restrictions and check valves in the pilot gas line. The apparatus also utilizes ionizers in the purge gas lines entering the wafer handling chamber and load locks. Through the use of an alpha particle emission source in the purge gas line prior to the load lock and wafer handling chamber, the purged gas molecules are ionized. The ionized gas is conductive and therefore discharges all static inside the semiconductor equipment. By removable of the static charge particle and wafers are no longer attracted to each other by electrostatic force. In addition, the apparatus includes means for reducing gas flow turbulence when switching valves within the reactor.

System and method for reducing particles in epitaxial reactors

A system for facilitating wafer transfer comprises a susceptor unit consisting of an inner susceptor section which rests within an outer susceptor section. A vertically movable and rotatable support spider located beneath the susceptor unit can rotate into positions to engage either the inner or the outer susceptor sections. When the inner section is engaged, the support spider lifts the inner section vertically out of the outer section. When the outer section is engaged, the support spider raises and lowers the entire susceptor unit. A fork type robotic arm end effector permits wafer pick up and unloading by the inner susceptor section.

A gas curtain for use with a semiconductor processing system to prevent unwanted gases from entering a processing chamber. The gas curtain includes both upward and downward flows of gas surrounding an isolation valve adjacent a delivery port into the processing chamber. In the valve open position, the downward flows extends between the valve and the delivery port, and the upward flow extends in an opposite direction behind the isolation valve. In the valve closed position, one of the flows extends through a slot in the isolation valve, while the other flow is directed in an opposite direction on the rear side of the isolation valve. In a method of using the gas curtain apparatus, a pick-up wand operating on a Bernoulli principal uses gases which are unwanted in the processing chamber, and just prior to loading wafers into the processing chamber, the gas flow in the Bernoulli wand is switched from a first gas to a second gas. Desirably, the second gas is hydrogen. The Bernoulli wand passes through the gas curtain before entering the processing chamber to remove any fugitive particles, moisture and unwanted gases. An exhaust located proximate to an input/output chamber creates a continuous pressure gradient in the handling chamber toward the input/output chamber further helping to prevent unwanted gases from entering the processing chamber.

Semiconductor processing system with gas curtain

This invention discloses a system for chemically depositing various materials carried by a reactant gas onto substrates for manufacturing semiconductor devices. The system includes special loading and unloading sub-systems for placement of substrates to be processed into the system and subsequent extraction without contamination of the system. A special substrate handling sub-system is provided for moving the substrates to and from at least one processing sub-system without physically contacting the planar surfaces of the substrates. The processing sub-system includes a horizontal gas flow reaction chamber having a rotatable susceptor therein for rotating the single substrate supportable thereon about an axis that is normal to the center of the substrate for averaging of the temperature and reactant gas concentration variables. The processing sub-system is separated from the handling sub-system by a special isolation valve and a gas injection device is used to inject the gas into the reaction chamber with a predetermined velocity profile. A special temperature sensing arrangement is provided in the processing sub-system for controlling a radiant heating sub-system which is provided above and below the reaction chamber.

Chemical vapor desposition system

An improved wafer handling system including a pair of robot arms each having a drive apparatus operatively coupled to its rear end portion for extending, retracting, and rotatably positioning the robot arms. The opposite end of the robot arms are operatively connected to a pick-up wand. The pick-up wand includes a top plate and a bottom plate. The lower surface of the top plate has a plurality of commonly-connected grooves ground therein and a reservoir for supplying gas to said grooves from the forward end portion of the robot arms. A plurality of gas outlets are provided in the bottom plate, and the bottom surface of the top plate is positioned securely over and flush against the top surface of the bottom plate such that at least one of the grooves are over each of the plurality of gas outlets for delivering gas thereto. The outlets are slanted for substantially radially outwardly directing a flow of gas away from the pattern and over the top surface of the water for creating an area of relatively low pressure between the bottom surface of the lower pick-up plate and the top surface of the wafer (with respect to the pressure existing beneath the wafer) for picking up or lifting the wafer without physical contact between the wafer and the wand in the actual pick-up by utilizing Bernoulli's Principle.

Wafer handling system with bernoulli pick-up

Growing community of inventors

Tempe, AZ, United States of America

Dennis L Goodwin