Applied Materials, Inc.

Dennis Koosau

John Patrick Holland

Alexander Matyushkin

Theodoros Panagopoulos

Dmitry Lubomirsky

Alexander Miller Paterson

Senh Thach

Xiaoping Zhou

Yeuk-Fai Edwin Mok

Subhash Deshmukh

Sharma V Pamarthy

Jim Zhongyi He

Jivko Dinev

Danny D Wang

Jeffrey William Dietz

Farid Abooameri

Robert Scott Clark

Huutri Dao

Kelly A McDonough

Paul Exline

David E Gutierrez

Declan Scanlan

An electrostatic chuck for receiving a substrate in a substrate processing chamber comprises a ceramic puck having a substrate receiving surface having a plurality of spaced apart mesas, an opposing backside surface, and central and peripheral portions. A plurality of heat transfer gas conduits traverse the ceramic puck and terminate in ports on the substrate receiving surface to provide heat transfer gas to the substrate receiving surface. An electrode is embedded in the ceramic puck to generate an electrostatic force to retain a substrate placed on the substrate receiving surface. A plurality of heater coils are also embedded in the ceramic puck, the heaters being radially spaced apart and concentric to one another.

Electrostatic chuck having a plurality of heater coils

Embodiments of the invention provide a method and apparatus, such as a processing chamber, suitable for etching high aspect ratio features. Other embodiments include a showerhead assembly for use in the processing chamber. In one embodiment, a processing chamber includes a chamber body having a showerhead assembly and substrate support disposed therein. The showerhead assembly includes at least two fluidly isolated plenums, a region transmissive to an optical metrology signal, and a plurality of gas passages formed through the showerhead assembly fluidly coupling the plenums to the interior volume of the chamber body.

Apparatus for etching high aspect ratio features

An electrostatic chuck for receiving a substrate in a substrate processing chamber comprises a ceramic puck having a substrate receiving surface and an opposing backside surface with a plurality of spaced apart mesas. An electrode is embedded in the ceramic puck to generate an electrostatic force to hold a substrate. Heater coils located at peripheral and central portions of the ceramic puck allow independent control of temperatures of the central and peripheral portions of the ceramic puck. The chuck is supported by a base having a groove with retained air. The chuck and base can also have an overlying edge ring and clamp ring.

Substrate support with electrostatic chuck having dual temperature zones

A semiconductor wafer processing apparatus, and more specifically, a semiconductor substrate support pedestal having a substrate support, an isolator, and first and second heat transfer plates for providing a controllable, uniform temperature distribution across the diameter of a semiconductor wafer. A semiconductor wafer placed upon the pedestal is maintained uniformly at a predetermined temperature by heating the wafer with one or more electrodes embedded within the substrate support and cooling the wafer with a fluid passing through the first and second heat transfer plates.

Method and apparatus for thermal control of a semiconductor substrate

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Hayward, CA, United States of America

Dennis Koosau