Asml Netherlands B.v.

Dennis De Graaf

Paul Janssen

James Norman Wiley

Arnoud Willem Notenboom

Derk Servatius Gertruda Brouns

Matthias Kruizinga

Beatrijs Louise Marie-Joseph Katrien Verbrugge

Robertus Cornelis Martinus De Kruif

Daniel Andrew Smith

Pieter-Jan Van Zwol

Michael Alfred Josephus Kuijken

Mahdiar Valefi

Thijs Kater

Erik Roelof Loopstra

Marcus Adrianus Van De Kerkhof

Chaitanya Krishna Ande

Zomer Silvester Houweling

Johannes Hubertus Josephina Moors

Michel Riepen

Johan Hendrik Klootwijk

Andrei Mikhailovich Yakunin

Gerardus Hubertus Petrus Maria Swinkels

Mária Péter

David Ferdinand Vles

Maxim Aleksandrovich Nasalevich

Hendrikus Gijsbertus Schimmel

Antonius Theodorus Wilhelmus Kempen

Willem Joan Van Der Zande

Vladimir Vitalevich Ivanov

Johannes Christiaan Leonardus Franken

Willem-Pieter Voorthuijzen

Adrianus Johannes Maria Giesbers

Evgenia Kurganova

Wilhelmus Theodorus Anthonius Johannes Van Den Einden

Aleksandar Nikolov Zdravkov

Reinier Theodorus Martinus Jilisen

Ties Wouter Van Der Woord

Alexey Sergeevich Kuznetsov

Uwe Bruno Heini Stamm

Peter Simon Antonius Knapen

Alexander Ludwig Klein

Hendrikus Jan Wondergem

Sander Baltussen

Jan Hendrik Willem Kuntzel

Hubertus Johannes Van De Wiel

Kevin Kornelsen

Guido Salmaso

Maxime Biron

Stephane Martel

Richard Beaudry

Gregory Richard Hayes

Frits Gubbels

Corne Rentrop

Amoud Willem Notenboom

Derk Servatius Brouns

Beatrijs Louise Verbrugge

Robertus Cornelis De Kruif

A method for manufacturing a membrane assembly for EUV lithography, the method including: providing a stack including: at least one membrane layer supported by a planar substrate, wherein the planar substrate has an inner region and a border region around the inner region; and a first sacrificial layer between the planar substrate and the membrane layer; selectively removing the inner region of the planar substrate such that the membrane assembly has: a membrane formed from the at least one membrane layer, and a border holding the membrane, the border having the border region of the planar substrate and the first sacrificial layer situated between the border region and the membrane layer, wherein the selectively removing the inner region of the planar substrate includes using an etchant which has a similar etch rate for the membrane layer and its oxide and a substantially different etch rate for the first sacrificial layer.

Method of manufacturing a membrane assembly

A wafer including a mask on one face and at least one layer on an opposite face, wherein the mask has at least one scribeline which overlies at least a portion of the opposite face which is substantially free of the at least one layer is described. Also described is a method of preparing a pellicle, the method including: providing a wafer having a mask on one face and at least one layer on an opposite face, defining a scribeline in the mask, and selectively removing a portion of the at least one layer which at least partially overlies the scribeline as well as a method of preparing a pellicle, the method including: providing a pellicle core, and removing at least some material from at least one face of the pellicle core in a non-oxidising environment. In any aspect, the pellicle may include a metal nitride layer.

Pellicle for EUV lithography

A method comprising the steps of receiving a mask assembly comprising a mask and a removable EUV transparent pellicle held by a pellicle frame, removing the pellicle frame and EUV transparent pellicle from the mask, using an inspection tool to inspect the mask pattern on the mask, and subsequently attaching to the mask an EUV transparent pellicle held by a pellicle frame. The method may also comprise the following steps: after removing the pellicle frame and EUV transparent pellicle from the mask, attaching to the mask an alternative pellicle frame holding an alternative pellicle formed from a material which is substantially transparent to an inspection beam of the inspection tool; and after using an inspection tool to inspect the mask pattern on the mask, removing the alternative pellicle held by the alternative pellicle frame from the mask in order to attach to the mask the EUV transparent pellicle held by the pellicle frame.

Mask assembly and associated methods

A pellicle having a metal oxysilicide layer. A pellicle having a molybdenum layer, a ruthenium layer and a silicon oxynitride layer, wherein the molybdenum layer is disposed between the ruthenium layer and the silicon oxynitride layer. A method of manufacturing a pellicle for a lithographic apparatus, the method including providing a metal oxysilicide layer. A lithographic assembly including a pellicle having a metal oxysilicide layer. The use of a pellicle having a metal oxysilicide layer in a lithographic apparatus.

EUV pellicles

A membrane for EUV lithography, the membrane having a thickness of no more than 200 nm and including a stack having: at least one silicon layer; and at least one silicon compound layer made of a compound of silicon and an element selected from the group consisting of boron, phosphorous, bromine.

Membrane for EUV lithography

A radiation source suitable for providing radiation to a lithographic apparatus generates radiation from a plasma () generated from a fuel () within an enclosure comprising a gas. The plasma generates primary fuel debris collected as a fuel layer on a debris-receiving surface ((), ()). The debris-receiving surface is heated to a temperature to maintain the fuel layer as a liquid, and to provide a reduced or zero rate of formation gas bubbles within the liquid fuel layer in order to reduce contamination of optical surfaces () by secondary debris arising from gas bubble eruption from the liquid fuel layer. Additionally or alternatively, the radiation source may have a debris receiving surface positioned and/or oriented such that substantially all lines normal to the debris receiving surface do not intersect an optically active surface of the radiation source.

Radiation source and method for lithography

A radiation source having a nozzle configured to direct a stream of fuel droplets along a trajectory towards a plasma formation location, a laser configured to direct laser radiation at the fuel droplets at the plasma formation location to generate, in use, a radiation generating plasma. The nozzle has an internal surface that is configured to prevent contamination present in fuel used to form the fuel droplets from being deposited on that internal surface.

Radiation source

A radiation system includes a target material supply configured to supply droplets of target material along a trajectory, and a laser system that includes an amplifier and optics. The optics are configured to establish a first beam path which passes through the amplifier and through a first location on the trajectory, and to establish a second beam path which passes through the amplifier and through a second location on the trajectory. The laser system is configured to generate a first pulse of laser radiation when photons emitted from the amplifier are reflected along the first beam path by a droplet of target material at the first location on the trajectory. The laser system is configured to generate a second pulse of laser radiation when photons emitted from the amplifier are reflected along the second beam path by the droplet of target material at the second location on the trajectory.

Radiation system and lithographic apparatus

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Waalre, Netherlands

Dennis De Graaf