Advanced Micro Devices Corporation

Advance Micro Devices, Inc.

Dennis C Swartz

Donald L Friede

Michael B Allen

Kin-Sang Lam

Patrick B Lee

Jeff Watts

Lan Vu

Roger Sorum

William R Brown

According to one aspect of the disclosure, the present invention provides methods and arrangements for controlling supply process gas to a process chamber for use in the manufacturing industry. Methods include controlling the operation of a valve coupled to the supply process gas line in a way such that pressure bursts in the process chamber due to the operation of the valve are reduced, or even eliminated.

Controlled gas supply line apparatus and process for infilm and onfilm defect reduction

An apparatus for and a method of introducing a gas into a vacuum processing chamber are provided. In one aspect, a processing apparatus is provided that includes a vacuum processing chamber, a first source of gas coupled to the vacuum processing chamber, and a fluid actuated valve for regulating the flow of the gas from the first source of gas to the vacuum processing chamber. The fluid actuated valve is operable to open in response to a flow of an actuating fluid and has a minimum valve opening pressure. A valve is provided for enabling the actuating fluid to flow to the fluid actuated valve. A controller is provided for selectively modulating the flow of the actuating fluid to the fluid actuated valve whereby the pressure of the actuating fluid is increased incrementally from an initial pressure to at least the minimum valve opening pressure. The apparatus reduces the risk of troublesome gas bursts in vacuum processing chambers.

Vacuum processing chamber with controlled gas supply valve

A method and apparatus for forming high-quality deposited material layers in semiconductor manufacturing are provided. In the method, the initial stages of a deposition are performed with no current flowing through substrate heater filaments. Current is restored to the heater filaments when needed to maintain the substrate within an acceptable range around a target or setpoint temperature. When an on/off temperature controller is used, the method may be implemented without disturbing the normal operation of the controller, by monitoring the heater filament current and beginning a deposition just after the current has been turned off by the controller. Current may also be removed from the heater filaments at the end of the deposition, so that concentrations of deposition species may equilibrate without the presence of heater currents. Performing as much of the deposition as possible with the substrate heater current off is believed to reduce defect formation which may be associated with magnetic fields and outgassing resulting from heater filament operation. A substrate heater design is provided in which heater filaments are eliminated and the substrate is heated using a heated, circulating fluid.

Modified material deposition sequence for reduced detect densities in semiconductor manufacturing

A low-pressure CVD apparatus is presented including one or more gas heating subsystems which heat process gases prior to their introduction into a reaction chamber of the low-pressure CVD apparatus. As a result, thermal expansions and contractions of the walls of the reaction chamber are reduced, along with the tendency of small particles of deposits on the inner walls of the reaction chamber to flake off. Fewer loose particulates created within the reaction chamber results in a reduction in the number of particulates adhering to surfaces of processed silicon wafers. Each gas heating subsystem includes a heating element thermally coupled to a gas feed line and to a process gas flowing within the gas feed line. Each gas heating subsystem also preferably includes a thermal feedback temperature control mechanism including a temperature sensor and a temperature control unit. The temperature sensor senses the temperature of the heated flow of process gas and produces a corresponding temperature signal. The temperature control unit is coupled to receive the temperature signal from the temperature sensor and controls the temperature of the heating element in response to the temperature signal. The temperature of the process gas entering the reaction chamber may thus be controllably increased.

Low pressure chemical vapor deposition apparatus including a process gas

An apparatus and method for monitoring temperature and current in a gas ignition chamber by monitoring temperature in the gas ignition chamber, monitoring current flowing through first and second ignitors housed in the gas ignition chamber, comparing the temperature of the gas ignition chamber to a predetermined temperature, comparing the current flowing through the first ignitor to a first predetermined current, comparing the current flowing through the second ignitor to a second predetermined current, inactivating the first ignitor and activating the second ignitor whenever the current through the first ignitor becomes less than the first predetermined current, and sounding an audible alarm whenever the current through said second ignitor becomes less than the second predetermined current or whenever the temperature is below the predetermined temperature.

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Buda, TX, United States of America

Dennis C Swartz