Technologies and Devices International, Inc.

Technologies and Devices, Inc.

Technologies and Deviles International, Inc.

Denis V Tsvetkov

Vladimir A Dmitriev

Andrey E Nikolaev

Yuri V Melnik

Alexander L Syrkin

Oleg V Kovalenkov

Alexander Usikov

Heikki I Helava

Aleksandr Usikov

Sergey Karpov

Karim Mynbaev

Stephen Saddow

Nataliya Savkina

Alexander Lebedev

Aleksei Pechnikov

Marina Mynbaeva

A method and apparatus for fabricating thin Group III nitride layers as well as Group III nitride layers that exhibit sharp layer-to-layer interfaces are provided. According to one aspect, an HVPE reactor includes one or more gas inlet tubes adjacent to the growth zone, thus allowing fine control of the delivery of reactive gases to the substrate surface. According to another aspect, an HVPE reactor includes both a growth zone and a growth interruption zone. According to another aspect, an HVPE reactor includes a slow growth rate gallium source, thus allowing thin layers to be grown. Using the slow growth rate gallium source in conjunction with a conventional gallium source allows a device structure to be fabricated during a single furnace run that includes both thick layers (i.e., utilizing the conventional gallium source) and thin layers (i.e., utilizing the slow growth rate gallium source).

Apparatus for epitaxially growing semiconductor device structures with sharp layer interfaces utilizing HVPE

A method for fabricating semiconductor devices with thin (e.g., submicron) and/or thick (e.g., between 1 micron and 100 microns thick) Group III nitride layers during a single epitaxial run is provided, the layers exhibiting sharp layer-to-layer interfaces. According to one aspect, an HVPE reactor is provided that includes one or more gas inlet tubes adjacent to the growth zone, thus allowing fine control of the delivery of reactive gases to the substrate surface. According to another aspect, an HVPE reactor is provided that includes at least one growth zone as well as a growth interruption zone. According to another aspect, an HVPE reactor is provided that includes extended growth sources such as slow growth rate gallium source with a reduced gallium surface area. According to another aspect, an HVPE reactor is provided that includes multiple sources of the same material, for example Mg, which can be used sequentially to prolong a growth cycle.

Manufacturing methods for semiconductor devices with multiple III-V material layers

A method for fabricating a p-n heterojunction device is provided, the device being preferably comprised of an n-type GaN layer co-doped with silicon and zinc and a p-type AlGaN layer. The device may also include a p-type GaN capping layer. The device can be grown on any of a variety of different base substrates, the base substrate comprised of either a single substrate or a single substrate and an intermediary layer. The device can be grown directly onto the surface of the substrate without the inclusion of a low temperature buffer layer.

Method for fabricating a P-N heterojunction device utilizing HVPE grown III-V compound layers and resultant device

Apparatus for epitaxially growing semiconductor device structures with submicron group III nitride layer utilizing HVPE

Method of epitaxially growing device structures with submicron group III nitride layers utilizing HVPE

Method of epitaxially growing submicron group III nitride layers utilizing HVPE

A method is disclosed for fabricating monocrystal material with the bandgap width exceeding 1.8 eV. The method comprises the steps of processing a monocrystal semiconductor wafer to develop a porous layer through electrolytic treatment of the wafer at direct current under UV-illumination, and epitaxially growing a monocrystal layer on said porous layer. Growth on porous layer produces semiconductor material with reduced stress and better characteristics than with the same material grown on non-porous layers and substrates. Also, semiconductor device structure comprising at least one layer of porous group III material is included.

Method of crystal growth and resulted structures

Method of epitaxially growing device structures with sharp layer interfaces utilizing HVPE

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Gaithersburg, MD, United States of America

Denis V Tsvetkov