Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Commissariat a L'energie Atomique

Ulis

Lynred

Denis Pelenc

Abdelkader Aliane

Claire Vialle

Xavier Zucchi

Valerie Goudon

Jean-Jacques Yon

Bernard Ferrand

Isabelle Chartier

Marc Guillaumont

Christophe Martinez

Bérangère Hyot

Christophe Kopp

Pierre Imperinetti

Giacomo Badano

Sébastien Becker

Sébastien Cortial

Marie-Francoise Armand

Christophe Wyon

Bernard Chambaz

Alexi Cardoso

Valérie Goudon

Sebastien Cortial

A process for fabricating a microbolometer includes producing a membrane containing a thermistor material, which is made of a first compound based on vanadium oxide and which is formed from a central segment. The central segment covers an intermediate insulating layer, and the thermistor material is formed from lateral segments, which make contact with biasing electrodes through apertures. The process also includes incorporating locally, by ion implantation, into the lateral segments an amount of an additional chemical element higher than or equal to the effective amount. The electrical resistivity ρL at room temperature of the compound thus modified is lower than or equal to 10% of the electrical resistivity ρc at room temperature of the first compound.

Method for manufacturing a microbolometer with thermistor material made from vanadium oxide having improved performances

A process for producing a microbolometer including a vanadium-oxide-based sensitive material containing an additional chemical element chosen from arsenic, germanium, silicon and phosphorus, the process including: determining an effective amount of the additional chemical element from which the modified compound, having undergone a step of exposure to a temperature Tfor a time Δt, exhibits an electrical resistivity ρat room temperature that is higher than 10% of its native value; producing the sensitive material in a thin layer, this material being formed from the modified compound having an amount of the additional chemical element that is greater than or equal to the effective amount; and exposing the sensitive material to the temperature Tfor the time Δt.

Process for producing a microbolometer comprising a vanadium-oxide-based sensitive material

A microbolometer may include a sensitive material based on vanadium oxide (VO) with an additional chemical element such as boron (B), but excluding nitrogen (N), the sensitive material wherein the sensitive material (i) is amorphous, (ii) has an electrical resistivity at ambient temperature in a range of from 1 to 30 &#x3a9;&#xb7;cm, (ii) has a homogeneous chemical composition, and (iv) has an amount of boron, defined as a ratio of a number of boron to vanadium atoms to that of vanadium, at least equal to 0.086.

Process for manufacturing a microbolometer containing vanadium oxide-based sensitive material

An infrared radiation detector includes an array of elementary imaging bolometric detectors, each of the elementary bolometric detectors being formed of a bolometric membrane including a film made of vanadium oxide VOx, having a resistivity in the range from 6 ohm&#xb7;cm to 50 ohm&#xb7;cm, said membrane being suspended above a substrate integrating a signal for reading out the signal generated by said elementary detectors and for sequentially addressing the elementary detectors. The detector includes at least one getter intended to ensure the trapping of residual gas during and after the forming of the detector, and includes a hermetically-sealed cavity having said array and said at least one getter housed therein, having an upper cap including a window transparent to infrared radiation, said cap being sealed by means of a seal on a chip supporting the array of elementary detectors or on a package at the bottom of which the chip supporting the array of elementary detectors has been attached, said cavity being under vacuum or a low pressure.

Detector of electromagnetic radiation and in particular infrared radiation, and process for producing said detector

The invention relates to a process for manufacturing a microbolometer () comprising a sensitive material () based on vanadium oxide (VO) comprising an additional chemical element chosen from among boron (B), carbon (C), with the exception of nitrogen (N), comprising the following steps:

A process for manufacturing at least one microbolometer comprising a sensitive material based on vanadium oxide containing nitrogen as additional chemical element, includes steps of determining a non-zero effective amount of the additional chemical element starting from which the sensitive material, having undergone a step of exposure to a temperature Tfor a duration &#x394;t, has an electrical resistivity &#x3c1;at ambient temperature greater than or equal to 50% of the native value &#x3c1;of said sensitive material at ambient temperature; producing the sensitive material in a thin layer having an amount of the additional chemical element greater than or equal to the effective amount determined beforehand, the sensitive material being amorphous and having an electrical resistivity of between 1 and 30 &#x3a9;&#xb7;cm; and exposing the sensitive material to a temperature Tfor a duration &#x394;t.

A radiation sensor including a plurality of pixels formed in and on a semiconductor substrate, each pixel including a microboard suspended above the substrate by thermal insulation arms, the microboard including: a conversion element for converting incident electromagnetic radiation into thermal energy; and a passive optical shutter including a heat-sensitive layer covering one of the faces of the conversion element, the heat-sensitive layer having a reflection coefficient for the radiation to be detected that increases as a function of its temperature.

Radiation sensor with anti-glare protection

The present invention relates to the use, as a thin sensitive-material film for bolometric detection, of at least one material based on an alloy comprising at least one chalcogenide, said chalcogen element being chosen from sulfur, selenium, telluride and their mixtures, characterized in that said material furthermore contains a sufficient amount of carbon and/or boron to confer upon the material a temperature coefficient of resistivity value at 300&#xb0; C. at least equal to 40% of the native value of the temperature coefficient of resistivity of said material at room temperature. The invention also relates to a bolometric device and its production process.

Sensitive material for bolometric detection

An optical system with an optical beam propagation extension, having an input and an output for the optical beam. The system includes at least two optical reflection elements for reflection of the beam, arranged to extend the propagation of the beam by reflection on the reflection elements, and at least one optical beam transmission element arranged to be traversed at least twice by the optical beam in different directions during propagation of the optical beam in the optical system. The optical transmission element ensures an optical transformation of the optical beam each time the optical beam passes through so as to correct the divergence thereof.

Optical system with beam propagation extension

A laser cavity with passive switching by a saturable absorber and a laser incorporating the cavity. The laser cavity has a solid, active material saturable absorber, an entrance mirror and an exit mirror. The saturable absorber is a thin film of saturable absorber material directly deposited on the solid, active medium. The laser incorporates such cavity and a mechanism for pumping the cavity.

Laser cavity passively switched by a saturable absorber and laser

Optically pumped laser minicavity, its production process and laser using said cavity, wherein the minicavity comprises an electrically insulating, parallelepipedic, solid emitter (1b), having two polished parallel lateral faces (6, 8), a monocrystalline substrate (2) and several monocrystalline layers epitaxied on the substrate and having in directions parallel to said faces a hardness equal to that of the substrate, one of the layers constituting a guide layer (4) able to guide the light emitted by the emitter and the pumping light and another layer (12) constituting a non-guiding protective layer, the protective layer and the substrate constituting two opposite faces of the emitter perpendicular to the lateral faces, laser activating ions being contained within the substrate and/or in one of the layers. In the case of an internal cavity, semi-reflecting mirrors (9, 10) are placed on the lateral faces of the emitter.

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Quaix en Chartreuse, France

Denis Pelenc