Shipley Company LLC

Omg Electronic Chemicals, Inc.

Denis Morrissey

Jeffrey M Calvert

James G Shelnut

Eugene N Step

Martin William Bayes

Mark Lefebvre

Robert D Mikkola

David Merricks

Donald E Storjohann

Leon Barstad

Robert A Binstead

Rozalia Beica

Robert A Schetty, Iii

Richard Bellemare

Anthony Piano

Luis A Gomez

The present technology generally relates to methods for metallizing an aluminum paste comprising contacting the aluminum paste with a cleaner, contacting the aluminum paste with an oxidation inhibiting deposit solution to deposit a layer of an oxidation inhibiting composition onto the aluminum paste and contacting the aluminum paste with conductive metal deposit solution to deposit a layer of a conductive metal onto the aluminum paste. Specifically, the present technology includes methods metallizing an aluminum paste comprising contacting the aluminum paste with an acidic cleaner, contacting the aluminum paste with an acid zincate solution to deposit zinc onto the aluminum paste and contacting the aluminum paste with an electroless nickel deposit solution to coat the aluminum paste with a nickel-phosphorus layer.

Methods for metallizing an aluminum paste

Disclosed are methods for repairing seed layers prior to subsequent metallization during the manufacture of electronic devices. Also disclosed are electronic devices containing substantially continuous seed layers.

Seed layer repair

Disclosed are electrolytes for copper electroplating that provide enhanced fill of small features with less overplate. Also disclosed are methods of plating substrates, such as electronic devices, using such electrolytes.

Method of electrodepositing copper

Disclosed are methods for repairing or enhancing discontinuous metal seed layers prior to subsequent metallization during the manufacture of electronic devices. Such repair methods do not require the use of a second electroplating bath.

Seed layer

Disclosed are methods for repairing seed layers prior to subsequent metallization during the manufacture of electronic devices.

Seed layer repair bath

Disclosed is a method of electroplating substrate such that small recessed features are completely filled with minimum thickness of the deposited metal over fields.

Electroplating method

Disclosed are compositions and methods for providing a planarized metal layer on a substrate having small apertures. The compositions and methods of the present invention provide complete fill of small apertures with reduced void formation.

Copper electroplating

Disclosed are methods of repairing metal seed layers prior to subsequent metallization. Such repair methods provide metal seed layers disposed on a substrate that are substantially free of metal oxide and substantially free of discontinuities.

Seed layer repair method

Disclosed are methods for analyzing additive breakdown products in electroplating baths as well as methods of controlling the presence of such breakdown products in electroplating baths.

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Huntington, NY, United States of America

Denis Morrissey