Analog Devices,inc.

Massachusetts Institute of Technology

Denis Michael Murphy

Puneet Srivastava

Daniel Piedra

Kenneth Flanders

Andrew Proudman

Leslie P Green

Peter R Stubler

Max Shulaker

Yosi Stein

Samuel Fuller

Tathagata Srimani

Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.

Aluminum-based gallium nitride integrated circuits

Gallium nitride integrated circuits including non-gold-based metallic materials

A back-gate carbon nanotube field effect transistor (CNFETs) provides: (1) reduced parasitic capacitance, which decreases the energy-delay product (EDP) thus improving the energy efficiency of digital systems (e.g., very-large-scale integrated circuits) and (2) scaling of transistors to smaller technology nodes (e.g., sub-3 nm nodes). An exemplary back-gate CNFET includes a channel. A source and a drain are disposed on a first side of the channel. A gate is disposed on a second side of the channel opposite to the first side. In this manner, the contacted gate pitch (CGP) of the back-gate CNFET may be scaled down without scaling the physical gate length (L) or contact length (L). The gate may also overlap with the source and/or the drain in this architecture. In one example, an exemplary CNFET was demonstrated to have a CGP less than 30 nm and 1.6&#xd7; improvement to EDP compared to top-gate CNFETs.

Back-gate field-effect transistors and methods for making the same

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Concord, MA, United States of America

Denis Michael Murphy