Commissariat a L'energie Atomique

Centre National De La Recherche Scientifique

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Stmicroelectronics Gmbh

Denis Mariolle

Jean-Charles Barbe

Lukasz Borowik

Ezra Bussmann

Fabien Cheynis

Yves Morand

Jean Dijon

Frederic Leroy

Louis Gorintin

Hélène Le Poche

David Fraboulet

Pierre Müller

Olivier Renault

Frédéric Leroy

Maylis Lavayssiere

Hugo Valloire

Maylis Lavayssière

The invention relates to a nanofiber fabrication method comprising nanofiber growth from a catalyst zone, furthermore comprising the following steps:

Method for the collective fabrication of carbon nanofibers on the surface of micropatterns constructed on the surface of a substrate

A method for making a semi-conductor nanocrystals, including at least the steps of:

Method for making semi-conductor nanocrystals oriented along a predefined direction

A method for making semi-conductor nanocrystals, including at least the steps of:

Method for making semi-conductor nanocrystals

A method for correcting astigmatism of an electronic optical column of an electron emission spectromicroscope, comprising the steps of: 

Method for correcting astigmatism in electron emission spectromicroscopy imaging

A method produces a microstructure comprising an island of material confined between two electrodes forming barriers, the island () of material having lateral flanks running parallel to and lateral flanks running perpendicular to the barriers, wherein the lateral flanks of the island are defined by etching of at least one layer (), called the template layer, and the barriers are formed by damascening. The method includes (a) a first etching of the template layer using a first etching mask having at least one filiform part, and (b) a second etching of the template layer, subsequent to the first etching, using a second etching mask also having at least one filiform part, oriented in a direction forming a non-zero angle with a direction of orientation of the filiform part of the first mask, in the vicinity of the site of formation of the island.

Method for making an island of material confined between electrodes, and application to transistors

Growing community of inventors

Grenoble, France

Denis Mariolle