Alcatel N.v.

Alcatel

Avanex Corporation

Alcatel Lucent

Denis Leclerc

Leon Goldstein

Claude Artigue

Joel Jacquet

Beatrice Dagens

Jose Chesnoy

Jean-Michel Gabriagues

Michael Schilling

Alexandre Shen

Klaus Wunstel

Jean-Yves Emery

Christopher Janz

Mathieu Boussard

Franck Mallecot

Francis Poingt

Bruno Mongazon-Cazavet

Abdelkrim Hebbar

Roland Mestric

Jean-Louis Gentner

Julien Robinson

Jean-Louis Lievin

Philippe Brosson

L&eacute;on Goldstein

Jean-Francedillaois Vinchant

Christophe Ougier

Jacques Benoit

Fabien Bataille

Didier Sigogne

Lionel Legouezigou

Fr Ed Pommereau

Bruno Mongazon-cazavet

The invention concerns in particular a system comprising: a first terminal (); a second terminal (oror); at least a first messaging system (oror) able to transmit, to the second terminal, at least the message body of a message () from the first terminal; at least one device () controlling at least one condition (), at least once, the said control device allowing the first messaging system to transmit to the second terminal at least the message body of the said message if the condition control result is positive, the said control device preventing the first messaging system from transmitting to the second terminal at least the message body of the said message if the condition control is negative, at least during the time for which the condition control result remains negative; at least one data server (ororor) external to the control device; at least one link providing communication through the Internet between on the hand the external server, or at least one of the external servers, and on the other hand the control device, the condition control device being designed to: store a message sent by the first terminal; receive at least one item of information from at least one external server; at least partially perform the condition control relating to the said message stored by means of the information received from the external server.

Condition control system, device and process for message transmission

The invention relates to a saturable light absorber adapted to receive different focused spectral components, wherein the structure of said saturable light absorber comprises microcavities integrated into a substrate and each associated with a respective one of said spectral components, each microcavity comprising a saturable absorber layer delimited by a top reflector and a bottom reflector and being disposed and having dimensions such that it receives only the focused spectral component associated with it.

Saturable light absorber structure and a device incorporating the structure for regenerating a wavelength division multiplexed signal

A semiconductor optical component is disclosed which includes a semiconductor material confinement layer containing acceptor dopants such that the doping is p-type doping. The confinement layer is deposited on another semiconductor layer and defines a plane parallel to the other semiconductor layer. Furthermore, the p-type doping concentration of the confinement layer has at least one gradient significantly different from zero in one direction in the plane. A method of fabricating the component is also disclosed.

Semiconductor optical component and a method of fabricating it

A process is provided for fabricating an integrated optical circuit comprising waveguides having different structures. In this process the coupled ends of the different structures are designed to enlarge the lateral mode size of optical waves issuing from them. The optical coupling losses of the integrated optical circuit obtained in this way are considerably reduced.

Method of fabricating integrated optical circuits which minimizes

To form an integrated optical component comprising a thick waveguide coupled to a thin waveguide, the method consists in: depositing a first guiding layer of said thick waveguide on a substrate; locally etching said first guiding layer over a portion allocated both to a coupling interface and to the thin waveguide; depositing a second guiding layer on the first guiding layer and on the locally etched portion so as to form said thick waveguide in a manner such that it has a maximum thickness in a first zone, a graded-thickness section in a second zone, and a reduced-thickness section in a third zone; locally etching the second guiding layer over a portion of the third zone, said portion being allocated to the thin waveguide; and depositing a third guiding layer in said portion of said third zone so as to form said thin waveguide.

Method of manufacturing an integrated optical component comprising a

The invention relates to wavelength converters for optical signals, as used in telecommunications, in particular for routing signals. The invention relates in particular to a wavelength converter including an interferometer structure for delivering an output optical signal, in which converter first and second branches, including at least one first semiconductor optical amplifier, are coupled to input peripheral semiconductor optical amplifiers and/or to an output peripheral semiconductor optical amplifier, wherein the structure of the active waveguide of at least one peripheral amplifier is so designed that it has a ratio of active area to confinement factor greater than that of the active waveguide of said first amplifier.

Wavelength converter for binary optical signals

An optical waveguide includes, in monolithic manner, a rear segment, a transition segment, and a front segment extending and succeeding one another along the length of the waveguide. A lateral confinement factor and a width the waveguide are respectively larger and smaller in the rear segment than in the front segment. According to the invention, the width increases in the transition segment until it reaches a value that is larger than that of the front segment. The invention is particularly applicable to integrating together a laser and an optical modulator for a telecommunications system.

Segmented optical waveguide suitable in particular for being included in

For end-to-end alignment of two optical waveguides one of which is in the form of a strip buried in a semiconductor wafer, a longitudinal lateral mark is used constituted by the flank of a valley etched in the wafer and self-aligned to the strip formed beforehand. To achieve this self-alignment a protection layer is deposited in the area in which the mark is to be formed, a register layer is deposited on top of the protection layer and a photosensitive resin is deposited on top of these layers and the substrate. First selective etching eliminates the register layer at the location of the valley of the mark. Second and third selective etching respectively etch the lateral channels of the strip and then the valley of the mark.

Method of making a mark on a wafer such as a semiconductor wafer

In this laser two successive sections of a light guide form a light amplifier (S1) and a saturable absorber (S2). In the invention a passive section (S3) of the guide follows the absorber. The invention is applicable especially to processing an optical signal.

Semiconductor laser with a saturable absorber

A photodiode (26) receives an optical input signal (P1) and an internal optical signal (P2) and supplies in response thereto an internal electrical signal (I2), which in turn controls a laser (4) which effects amplification and supplies the internal optical signal and an output signal (P3). The feedback loop formed by this photodiode and laser leads to a strong non-linearity in the variation of the output signal as a function of the input signal. The invention is useful especially in optical fiber telecommunications systems.

Positive feedback device for processing an optical signal

A tunable multisection laser of the invention includes an active layer (C2) which is thicker in a phase tuning section (S3) and in a grating section (S2) including a Bragg distributed reflector (R) having a controllable equivalent pitch than it is in a light amplification section (S1). The invention is particularly applicable to making components for telecommunications by means of optical fibers.

Tunable semiconductor laser

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Igny, France

Denis Leclerc