Tektronix, Inc.

Scientific Imaging Technologies, Inc.

Denis L Heidtmann

Morley M Blouke

Brian L Corrie

Raymond Hayes

Taner Dosluoglu

Larry D Riley

A CCD has a floating diffusion for receiving charge packets to be sensed, a reset diffusion connected to a reference potential level and a reset channel region between the floating diffusion and the reset diffusion. A first reset gate is positioned over a first segment of the reset channel region for controlling the conductivity of the first segment in accordance with the potential of the first reset gate, and a second reset gate is positioned over a second segment of the reset channel region between the first reset gate and the reset diffusion for controlling the conductivity of the second segment in accordance with the potential of the second reset gate. Each reset gate has a first state in which the respective segment of the reset channel region is conductive and a second state in which the respective segment of the reset channel region is not conductive, whereby a charge packet entering the floating diffusion sees a relatively small effective capacitance when the first reset gate is in the second state and sees a relatively large effective capacitance when the first reset gate is in the first state and the second reset gate is in the second state. A reset gate controller controls dynamically the states of the first and second reset gates in accordance with predicted size of a charge packet entering the floating diffusion.

CCD with enhanced output dynamic range

A charge-coupled device for detecting spatial variation in the intensity of electromagnetic radiation comprises a body of semiconductor material that responds to electromagnetic radiation in a given spectral region by generating charge carriers. The body of semiconductor material has first and second sense volumes that are isolated from each other with respect to diffusion of charge carriers. A sense electrode structure overlies the sense volumes. First and second transfer regions are in communication with the first and second sense volumes respectively, and a transfer electrode structure overlies the transfer regions. A readout region has first and second zones in communication with the first and second transfer regions respectively and is connected to an output node. Charge can be accumulated in the sense volumes over an integration period and the resulting charge samples can be shifted separately through the transfer regions and applied to the output node.

Charge-coupled device for detecting spatial variation in the intensity

A device for detecting spatial variation in the intensity of electromagnetic radiation in a given spectral region comprises a body of semiconductor material that responds to electromagnetic radiation in the given spectral region by generating charge carriers. The body of semiconductor material has first and second charge collection regions separated by a barrier region that forms a potential barrier to the charge carriers in the charge collection regions. The device also comprises an electrode structure for establishing a predetermined potential in the charge collection regions, whereby charge carriers can be accumulated in the charge collection regions, and first and second output devices connected to the first and second charge collection regions respectively for extracting charge therefrom.

Device for detecting spatial variation in the intensity of

A single phase, buried channel charge coupled device has a high conductivity layer overlying the pinned regions thereof and extending to the channel stop regions, thereby facilitating the transfer of charge carriers between the channel stop regions and the pinned regions in order that the potential profile underlying said pinned regions may be more readily maintained. Extension of that high conductivity layer over the channel gate electrodes also facilitates the transmission of clocking voltages to the channel gate electrodes and allows the device to operate with decreased power losses.

Fast channel single phase buried channel CCD

An integrated circuit formed in a semiconductor die which has at least two distinct functional regions is treated by mounting the die by way of its front face on a support member, and subsequently removing die material by way of its back face so as to physically separate the functional regions of the die from each other.

Method of treating an integrated circuit

A CCD is fabricated from an intermediate product comprising a body of semiconductor material having a channel region of a first conductivity type bounded by a substrate region of a second, opposite conductivity type and a surface of the body, and first and second gates overlying the surface and spaced from each other. The method comprises introducing a dopant into the channel region by way of the surface of the body. The first and second gates are opaque with respect to the dopant. The dopant is such that it forms a zone within the channel region, beneath the space between the first and second gates, and the zone is of the first conductivity type and is of a higher doping concentration than other portions of the channel region. A third gate is formed over the surface of the body of semiconductor material, the third gate being at least partially disposed across the space between the first and second gates.

Electrode structure for a corner turn in a series-parallel-series charge

A charge-coupled device comprises a substrate of semiconductor material having at least two buried channels formed therein. At least two sets of clock electrodes overlie the buried channels. By application of appropriate potentials to the clock electrodes, an electrical charge may be propagated in controlled fashion along each buried channel towards its output end. A floating diffusion is formed at the output end of each buried channel for receiving charge propagated along the channel. Output transistors are assoicated with the buried channels respectively and each has a control electrode connected to the floating diffusion of the associated channel. An output diffusion is located between the floating diffusions and the control electrodes of the transistors and extends perpendicular to the channels. A reset gate is associated with each channel and lies over the substrate between the floating diffusion of the associated channel and the output diffusion, so that by application of a predetermined potential to the reset gate a conductive channel is formed in the substrate between the floating diffusion of the associated channel and the output diffusion. A reset bus extends over the substrate on the opposite side of the floating diffusions from the reset gate and has a bus extension which extends over the substrate between the floating diffusions and is connected to the reset gates.

Growing community of inventors

Portland, OR, United States of America

Denis L Heidtmann