Saint-gobain Glass France

Centre National De La Recherche Scientifique

Electricite De France

Electricite De France - Service National

Centre National De La Recherche Scientifique-cnrs

Electricité De France, Société Anonyme

Denis Guimard

Daniel Lincot

Jean-François Guillemoles

Stéphane Taunier

Pierre-Philippe Grand

Johann Skolski

Joël Bellemin

Silvia Mariani

Georges Zagdoun

Samuel Dubrenat

Romain Hivet

João Abreu

Moëz Ben-Farah

Pierre Cowache

Jacques Vedel

Julien Booz

Negar Naghavi

Anne Lelarge

Cécile Delbecq

Olivier Kerrec

Michel Mahe

Matthieu Orven

Nadia Zenid

Stephane Taunier

Moez Ben-Farah

Pierre Philippe Grand

Thomas Barres

Stèphane Taunier

A material including a transparent substrate coated with a stack of thin layers including at least one silver-based functional metallic layer and at least one zinc-based metallic layer. The zinc-based metallic layer is located above or below a silver-based functional metallic layer and separated from this silver-based functional metallic layer by at least one intermediate oxide layer based on one or more elements chosen from zinc, titanium, zirconium, tin, niobium, magnesium, hafnium and nickel.

Heat-treated material having improved mechanical properties

A material includes a transparent substrate coated with a stack of thin layers including at least one silver-based functional metallic layer, at least one blocking layer located directly in contact with a silver-based functional metallic layer, and at least one zinc-based metallic layer located above or below this silver-based functional metallic layer, directly in contact or separated by one or more layers having a total thickness of less than or equal to 20 nm.

Heat-treated material with improved mechanical properties

A material includes a transparent substrate coated with a stack of thin layers including at least one silver-based functional metallic layer, at least one zinc-based metallic layer, located above and/or below a silver-based functional metallic layer, and at least one nickel oxide-based layer located above and/or below this silver-based functional metallic layer and separated from this layer by at least one crystallized dielectric layer.

Heat-treated material having low resistivity and improved mechanical properties

A transparent substrate is provided, on a main face, with a stack of thin layers including at least one metallic functional layer having properties of reflection in the infrared region and/or in the solar radiation region, based on silver or on silver-containing metal alloy, and two antireflective coating. The antireflective coatings each include at least one dielectric layer. The functional layer is positioned between the two antireflective coatings. Additionally, at least one nickel oxide NiO layer is located on and in contact with the functional layer starting with the substrate. A physical thickness of the nickel oxide NiO layer is at least 0.3 nm.

Substrate provided with a stack having thermal properties comprising at least one nickel oxide layer

A transparent substrate is provided, on a main face, with a stack of thin layers including at least one, metallic functional layer having properties of reflection in the infrared region and/or in the solar radiation region, based on silver or on silver-containing metal alloy, and two antireflective coatings. The antireflective coatings each include at least one dielectric layer. The functional layer is positioned between the two antireflective coatings. At least one nickel oxide NiO layer is located under the functional layer in the direction of the substrate and/or above the functional layer, with interposition of at least one layer or of just one layer made of a different material between the or each nickel oxide NiO layer and the functional layer.

An electrically conducting support for an electrochromic device and its manufacture; the electrically conducting support including, in this order: a substrate, an optional underlayer, a first inorganic layer on the optional underlayer or on the substrate, partially or completely structured in thickness with traversing holes or cavities, an electrode, made of metal grid with strands which exhibit, along their length, a rough central region between less rough lateral regions which are flush with the top surface, an electrically conducting coating made of inorganic material.

Electrically conducting support for an electrochromic device, electrochromic device incorporating it, and its manufacture

An electrically conductive OLED carrier includes in this order a glazing substrate; an electrode arranged in a metal grid made up of strands; an electrically insulating light extraction layer under the metal grid; and a layer partially structured in its thickness. The layer of refractive is of index n3 of 1.7 to 2.3, and is located on the light extraction layer. The partially structured layer is formed from a region structured with cavities at least partially containing the metal grid; and from another region, called the low region, located on the light extraction layer. The separation H between the surface of the structured region called the high surface, and therefore that furthest from the substrate, and the surface of the metal grid called the upper surface, and therefore that furthest from the substrate is, in absolute value, smaller than or equal to 100 nm.

Electrically conductive OLED carrier, OLED incorporating said carrier, and its manufacture

An electrically conductive OLED carrier includes a glazing substrate; an electrode arranged in a metal grid made up of strands; an insulating light extraction layer under the metal grid; and a layer partially structured in its thickness, this layer being of given composition and of refractive index nof 1.7 to 2.3, and being located on the light extraction layer, which partially structured layer is formed from a region structured with cavities containing the metal grid, and from another region, called the low region, located on the light extraction layer, the separation H between that surface of the structured region called the high surface, and that surface of the metal grid called the upper surface, and therefore that furthest from the substrate, is larger than 100 nm. The strands have along their length a central zone between lateral zones that are flush with the high surface.

The invention relates to a method for production of thin layers of semiconductor alloys of the I-III-VItype, including sulphur, for photovoltaic applications, whereby a heterostructure is firstly deposited on a substrate comprising a thin layer of precursor I-III-VIwhich is essentially amorphous and a thin layer, including at least some sulphur, the heterostructure is then annealed to promote the diffusion of the sulphur into the precursor layer and the at least partial crystallization of the I-III-VIalloy of the precursor layer with a stoichiometry which hence includes sulphur. A layer of selenium may also be deposited to assist the recrystallization processes or annealing.

Sulfurization and selenization of electrodeposited CIGS films by thermal annealing

The invention relates to a method of producing thin films of compound CIGS by means of electrodeposition. According to the invention, a surface-active compound, such as dodecyl sodium sulphate, is added to an electrolysis bath solution in order to promote the incorporation of gallium in the CIGS films.

Method of producing thin films of compound I-III-VI, promoting the incorporation of III elements in the film

The invention relates to the regeneration of an electrolysis bath for the production of I-III-VI&#x3c;SB&#x3e;Y&#x3c;/SB&#x3e; compounds in thin layers, where y is approaching 2 and VI is an element including selenium, whereby selenium is regenerated in the form Se(IV) and/or with addition of oxygenated water to reoxidise the selenium in the bath to give the form Se(IV).

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The invention concerns a method for making thin-film CIGS which consists in: electrochemically depositing on a substrate a layer of stoichiometry close to CuInSe; then rapidly annealing said layer from a light source with pulses of sufficient power to recrystallize CIS. Advantageously, the electrodeposited elements are premixed. Thus, after the deposition step, a homogeneous matrix is obtained which can support sudden temperature increases during the rapid annealing.

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Paris, France

Denis Guimard