Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Stmicroelectronics (alps) Sas

Stmicroelectronics S.a.

St-ericsson Sa

Stmicroelectronics (grenoble 2) Sas

St-ericsson (grenoble) Sas

Msa Gallet

Denis Cottin

Vratislav Michal

Guillaume Savelli

Fabrice Romain

Marc Plissonnier

Patrik Arno

Tristan Caroff

Thierry Schwartzmann

Christophe Garnier

Vincent Remondière

Bertrand Martinet

Christelle Navone

Nicolas Marty

Jean-Charles Vildeuil

Sophie Taupin

Mathieu Marin

An output potential level among two first levels is delivered according to an input level among two second levels. The output potential level is delivered at a first node connecting together first and second transistors electrically in series between two second nodes of application of the first levels. A first DC voltage defining a high limit for the control voltage of the first transistor is delivered by a first voltage generator powered by one of the second nodes. A second DC voltage defining a high limit for the control voltage of the second transistor is delivered by a second voltage generator controlled by a value representative of the first voltage and powered between the second nodes.

Level shifting device and method

An embodiment circuit includes a first voltage divider coupled between a first voltage level and a ground potential. The circuit further includes an error amplifier having a first input terminal coupled to a node between a first resistive element and a second resistive element of the first voltage divider. The circuit further includes a second voltage divider coupled between a second voltage level and a reference voltage, wherein a second input terminal of the error amplifier is coupled to a node between a third resistive element and a fourth resistive element of the second voltage divider, and wherein an output voltage of the error amplifier is configured to control a potential difference between the first voltage level and the second voltage level.

Differential sensing circuit of a floating voltage source

A circuit including: a plurality of first switches connected in parallel between a first terminal and a second terminal; and a control circuit capable of implementing the following steps at each period of a clock signal: comparing the voltage between the first and second terminals with a reference voltage; if the voltage between the first and second terminals is greater than the reference voltage, turning on one of the first switches without modifying the state of the other switches; and if the voltage between the first and second terminals is smaller than the reference voltage, turning off one of the first switches without modifying the state of the other switches.

Circuit to implement a diode function

The thermoelectric device includes a first set of identical unitary thereto-electric systems, each system including at least one thermocouple and the first set has at least one faulty unitary thermoelectric system. It further has devices for detecting functional unitary thermoelectric systems of the first set of unitary thermoelectric systems, and devices designed to electrically connect a second set of functional unitary thermoelectric systems chosen from the first set of unitary thermoelectric systems, in the form of an electric circuit, so that all the unitary thermoelectric systems of the electric circuit have the same current flowing through them.

Modulable and adjustable thermoelectric device and operating method of the thermoelectric device

A charge-pump device receives two complementary driving signals and a DC signal that are applied to a charge-pump stage containing a full-wave rectifier bridge configured to deliver a DC output signal. The bridge includes active switches controllable by control signals present at two control nodes. The charge-pump device further receives complementary auxiliary signals that are respectively synchronous with the complementary driving signals but have faster edges. Two resistive capacitive filters filter the complementary auxiliary signals to generate control signals at the two control nodes for controlling actuation of the active switches in the bridge.

Charge-pump device with reduced cross-conduction losses

The sensor is made on a semiconductor substrate covered with an electrically insulating layer. The electrically insulating layer separates a thermocouple from the substrate. It includes a first portion presenting a first value of capacitance per unit area and a second portion presenting a second value of capacitance per unit area, which is lower than the first value. The sensor includes first and second output terminals connected to the thermocouple. The first output terminal includes a first capacitor having a first electrode formed by a first leg made of an electrically conducting material. The second electrode of the capacitor is formed by a part of the substrate facing said first leg and separated from the first electrode by the first portion of the electrically insulating layer. The first leg connects the thermocouple while overlapping the second portion of the electrically insulating layer.

Differential temperature sensor and its capacitors in CMOS/BICMOS technology

An integrated thermoelectric device in semiconductor technology comprising a hot side arranged in proximity to a heat source, and a cold side, providing a signal according to the temperature difference between the hot and cold sides. The hot and cold sides are arranged in such a way that their temperatures tend to equal out when the temperature of the heat source varies, i.e. when the sensor is in poor operating conditions. A measuring circuit provides useful information according to a continuously variable portion of the signal from a time when the temperature of the heat source varies. If the temperature of the heat source ceases to vary, the temperatures of the hot and cold sides eventually equal out and the signal is annulled and ceases to vary. The distance between the hot and cold sides can be less than 100 &#x3bc;m.

Thermoelectric device using semiconductor technology

An integrated circuit includes a substrate and a resistor. The resistor is formed from at least two access wells of a first conductivity type and a deep buried layer electrically connecting the wells. The deep buried layer is at least partly covered by a region of opposite conductivity.

Integrated circuit comprising a substrate and a resistor

A ramp generator is provided that includes an amplifier, first and second transistors, a variable resistive load having a control electrode, and a capacitor. The amplifier has an inverting input that receives a first reference voltage, and an output connected to the gate of the first transistor. The first transistor has a source connected to a second reference voltage, and a drain connected to the non-inverting input of the amplifier and also to the variable resistive load. The second transistor mirrors the current of the first transistor so as to charge the capacitor, which is periodically discharged by a discharging circuit. In one embodiment, the generator further comprises a comparator, a filter, and an integrator that control the variable resistive load so as to generate a slope having characteristics that are noticeably independent from dispersion, from manufacturing methods, and temperature.

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Crolles, France

Denis Cottin