Leadtrend Technology Corporation

Deng-Sheng Huang

Tsung-Yi Huang

High-voltage semiconductor devices are disclosed, each having gate, source and drain electrodes. A deep well layer is formed on a substrate and has a surface, where the substrate and the deep well layer are of first-type and second-type conductivities, respectively. A field isolation layer on the surface isolates a drain active region from a source active region. The source electrode contacts the source active region on the surface to form an ohmic contact. The drain electrode contacts the drain active region on the surface. A first well layer of the first-type conductivity is formed on the surface and between the ohmic contact and the drain active region, and at least a portion of the first well layer is under the field isolation layer. A bottom layer of the first-type conductivity is formed at a bottom of the deep well layer. The gate electrode is on the field isolation layer.

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Zhubei, Taiwan

Deng-Sheng Huang