Seh America, Inc.

Dena C Mitchell

Mark R Boydston

A method for preparing an epitaxial silicon wafer in a reactor is provided. The method comprises the steps of depositing an epitaxial layer on a surface of a silicon wafer contained in the reactor at an elevated temperature; purging the reactor with hydrogen after the epitaxial deposition; and cooling the reactor to an appropriate temperature which allows hydrogen passivation of the surface of the epitaxial layer. This prevents the formation of an oxide layer on the surface of the epitaxial layer for a sufficient amount of time to allow an accurate measurement of a carrier density profile of the epitaxial silicon wafer.

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Portland, OR, United States of America

Dena C Mitchell