Monolithic Power Systems, Inc.

Deming Xiao

Ji-Hyoung Yoo

Joel McGregor

Zeqiang Yao

Tiesheng Li

Michael Ren Hsing

Jeesung Jung

Haifeng Yang

A manufacturing process of a DMOS device in a drift region in a semiconductor substrate, having: forming a polysilicon layer above the drift region; forming a block layer above the polysilicon layer; etching both the block layer and the polysilicon layer, through a window of a first masking layer to expose a window to the drift region; implanting dopants through the window to the drift region to form a body region; forming blocking spacers to wrap side walls of the polysilicon layer; implanting dopants into the body region under a window shaped by the blocking spacers to form a body pickup region; etching away the blocking spacers; performing a masking step to form gates; forming ONO spacers to wrap side walls of the gates; and performing a masking step to form source regions and drain pickup regions.

Manufacturing method of self-aligned DMOS body pickup

A method for fabricating a LDMOS device, including: forming a semiconductor substrate; forming a dielectric layer atop the semiconductor substrate and an electric conducting layer on the dielectric layer; forming a first photoresist layer on the electric conducting layer; patterning the first photoresist layer through a first mask to form a first opening; etching the electric conducting layer through the first opening; implanting dopants of a first doping type into the semiconductor substrate through the first opening to form a first body region adjacent to the surface of the semiconductor substrate, and a second body region located beneath the first body region; removing the first photoresist layer; etching the electric conducting layer using a second photoresist layer and a second mask.

Method for fabricating LDMOS with self-aligned body

A method for fabricating a LDMOS device in a well region of a semiconductor substrate, including: etching a polysilicon layer above the well region through a window for a body region; and forming spacers at side walls of the polysilicon layer, to define positions of source regions in the well region.

Method for fabricating LDMOS using CMP technology

RESURF effect devices with both relatively deep trenches and relatively deep implants are described herein. Also, methods of fabricating such devices are described herein. A RESURF effect device may include alternating regions of first and second conductivity types where each of the second regions includes an implant region formed into a trench region of the second region.

Growing community of inventors

Los Altos Hills, CA, United States of America

Deming Xiao