Advanced Technology Materials, Inc.

Delwyn F Cummings

Ward C Stevens

Edward A Sturm

Walter Precht

Philip S Chen

Richard Koba

Donald Kupp

A ceramic composition having a high adsorptive capacity for oxygen at elevated temperature, including at least one of: Bi Er O ; Bi Y O ; La Ba Co Ni O ; La Sr Co Ni O ; La Ca Co Ni O ; La Ba Co Fe O ; La Sr Co Fe O ; and La Ca Co Fe O ; wherein x is from 0.2 to 0.8, y is from 0 to 1.0 and d&equals;0.1 to 0.9. Such ceramic composition may be made using a modified Pechini synthetic procedure. The resulting ceramic composition is usefully employed as an adsorbent for separation of oxygen from an oxygen-containing feed gas mixture, e.g., in a pressure swing adsorption (PSA) process.

Ceramic composition having high adsorptive capacity for oxygen at elevated temperature

A pressure swing adsorption system for processing an oxygen-containing feed gas mixture to extract oxygen therefrom, comprising an adsorbent bed arranged for elevated temperature sorption/desorption operation, wherein the adsorbent bed comprises a ceramic adsorbent having affinity for oxygen when the ceramic adsorbent is at elevated temperature. Suitable ceramic adsorbents include lanthanum calcium cobalt ferrites and other oxygen ionic transport ceramic metal oxide compositions. As applied to the separation of air or other oxygen/nitrogen mixtures, the PSA system is effective to produce oxygen-rich as well as nitrogen-rich product gases.

High temperature pressure swing adsorption system for separation of oxygen-containing gas mixtures

An article comprising a non-conductive substrate having a sub-micron thickness of an oxidizable conductive first metal coating thereon, and a second (promoter) metal which is galvanically effective to promote the corrosion of the first metal, discontinuously coated on the first metal coating. Optionally, the second metal-doped, first metal-coated substrate may be further coated with a salt, to accelerate the galvanic corrosion reaction by which the conductive first metal coating is oxidized. Also disclosed is a related method of forming such articles, comprising chemical vapor depositing the first metal on the substrate and chemical vapor depositing the second metal on the applied first metal coating, and of optionally applying a salt by salt solution contacting of the second metal-doped, first metal-coated substrate. When utilized in a form comprising fine-diameter substrate elements such as glass or ceramic filaments, the resulting product may be usefully employed as an evanescent chaff. In the presence of atmospheric moisture, such evanescent chaff undergoes oxidation of the first metal coating so that the radar signature of the chaff transiently decays.

Method of making galvanically dissipatable evanescent chaff fiber

A semiconductor wafer base is disclosed which is suitable for fabrication of devices in silicon carbide, comprising a single crystal substrate which is a transition metal carbide alloy having cubic crystal structure and an unpolytyped, single crystal 3C-silicon carbide overlay epitaxially related to the substrate. Preferably, the substrate is an alloy of two or more of titanium carbide, tantalum carbide, vanadium carbide, and niobium carbide, with lattice parameter differing from 3C-silicon carbide by less than about 1%. Use of the transition metal carbide alloys enables the preparation of large, single crystal substrates free from cracks, dislocations, or other defects, suitable for epitaxial deposition of 3C-silicon carbide. The 3C-silicon carbide epitaxial overlay may be deposited by any suitable technique, including chemical vapor deposition and reactive evaporation, and may be doped with n- or p-type dopants. The 3C-silicon carbide is useful for fabricating semiconductor devices for use at high temperatures, high powers, and in corrosive environments.

Wafer base for silicon carbide semiconductor devices, incorporating

A semiconductor wafer base is disclosed which is suitable for fabrication of devices in silicon carbide, comprising a single crystal substrate which is a transition metal carbide alloy having cubic crystal structure and an unpolytyped, single crystal 3C-silicon carbide overlay epitaxially related to the substrate. Preferably, the substrate is an alloy of two or more of titanium carbide, tantalum carbide, vanadium carbide, and niobium carbide, with alttice parameter differing from 3C-silicon carbide by less than about 1%. Use of the transition metal carbide alloys enables the preparation of large, single crystal substrates free from cracks, dislocations, or other defects, suitable for epitaxial deposition of 3C-silicon carbide. The 3C-silicon carbide epitaxial overlay may be deposited by any suitable technique, including chemical vapor deposition and reactive evaporation, and may be doped with n- or p-type dopants. The 3C-silicon carbide is useful for fabricating semiconductor devices for use at high temperatures, high powers, and in corrosive environments.

An article comprising a non-conductive substrate having a sub-micron thickness of an oxidizable conductive first metal coating thereon, and a second (promoter) metal which is galvanically effective to promote the corrosion of the first metal, discontinuously coated on the first metal coating. Optionally, the second metal-doped, first metal-coated substrate may be further coated with a salt, to accelerate the galvanic corrosion reaction by which the conductive first metal coating is oxidized. Also disclosed is a related method of forming such articles, comprising chemical vapor depositing the first metal on the substrate and chemical vapor depositing the second metal on the applied first metal coating, and of optionally applying a salt by salt solution contacting of the second metal-doped, first metal-coated substrate. When utilized in a form comprising fine-diameter substrate elements such as glass or ceramic filaments, the resulting product may be usefully employed as an evanescent chaff. In the presence of atmosphere moisture, such evanescent chaff undergoes oxidation of the first metal coating so that the radar signature of the chaff transiently decays.

Growing community of inventors

Meriden, CT, United States of America

Delwyn F Cummings