Asm IP Holding B.v.

Umicore

Delphine Longrie

Jan Willem Maes

Suvi P Haukka

Eva E Tois

Qi Xie

Han Wang

David Kurt De Roest

Shaoren Deng

Krzysztof Kachel

Viljami J Pore

Hidemi Suemori

Andrea Illiberi

Ivo Johannes Raaijmakers

Chiyu Zhu

Timo Asikainen

Julian Hsieh

Antti Niskanen

Varun Sharma

Dai Ishikawa

Kunitoshi Namba

Shang Chen

Takahiro Onuma

Toshiharu Watarai

VamsI Paruchuri

Jan Willem Hub Maes

Harald Profijt

Marko J Tuominen

Michael Eugene Givens

Raija H Matero

Fu Tang

Elina Färm

Peng-Fu Hsu

Charles Dezelah

Dan V Goia

Stijn Put

Jan Gilleir

Michael Givens

Kris Driesen

Nicolas Marx

Jean-Sébastien Bridel

John I Njagi

Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.

Selective passivation and selective deposition

Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity. Masking applications employing selective organic films are provided. Post-deposition modification of the organic films, such as metallic infiltration and/or carbon removal, is also disclosed.

Deposition of organic films

Methods for selective deposition, and structures thereof, are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. A passivation layer is selectively formed from vapor phase reactants on the first surface while leaving the second surface without the passivation layer. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the passivation layer. The first surface can be metallic while the second surface is dielectric, or the second surface is dielectric while the second surface is metallic. Accordingly, material, such as a dielectric, can be selectively deposited on either metallic or dielectric surfaces relative to the other type of surface using techniques described herein. Techniques and resultant structures are also disclosed for control of positioning and shape of layer edges relative to boundaries between underlying disparate materials.

A method for selectively depositing a metallic film on a substrate comprising a first dielectric surface and a second metallic surface is disclosed. The method may include, exposing the substrate to a passivating agent, performing a surface treatment on the second metallic surface, and selectively depositing the metallic film on the first dielectric surface relative to the second metallic surface. Semiconductor device structures including a metallic film selectively deposited by the methods of the disclosure are also disclosed.

Method for selectively depositing a metallic film on a substrate

A method for depositing an oxide film on a substrate by a cyclical deposition is disclosed. The method may include: depositing a metal oxide film over the substrate utilizing at least one deposition cycle of a first sub-cycle of the cyclical deposition process; and depositing a silicon oxide film directly on the metal oxide film utilizing at least one deposition cycle of a second sub-cycle of the cyclical deposition process. Semiconductor device structures including an oxide film deposited by the methods of the disclosure are also disclosed.

Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures

Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface are disclosed. The methods may include: contacting the substrate with a plasma generated from a hydrogen containing gas, selectively forming a passivation film from vapor phase reactants on the first dielectric surface while leaving the second metallic surface free from the passivation film, and selectively depositing the target film from vapor phase reactants on the second metallic surface relative to the passivation film.

Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface

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Ghent, Belgium

Delphine Longrie