Stmicroelectronics S.a.

Stmicroelectronics (crolles 2) Sas

Delphine Aime

Benoît Froment

An embodiment of a method for forming silicide areas of different thicknesses in a device comprising first and second silicon areas, comprising the steps of: implanting antimony or aluminum in the upper portion of the first silicon areas; covering the silicon areas with a metallic material; and heating the device to transform all or part of the silicon areas into silicide areas, whereby the silicide areas formed at the level of the first silicon areas are thinner than the silicide areas formed at the level of the second silicon areas.

Forming of silicide areas in a semiconductor device

An MOS transistor with a fully silicided gate is produced by forming a silicide compound in the gate separately and independently of silicide portions located in source and drain zones of the transistor. To this end, the silicide portions of the source and drain zones are covered by substantially impermeable coatings. The coatings prevent the silicide portions of the source and drain zones from increasing in volume during separate and independent formation of the gate silicide compound. The silicide gate may thus be thicker than the silicide portions of the source and drain zones.

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Grenoble, France

Delphine Aime